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參數(shù)資料
| 型號： | MR856G |
| 廠商： | DAESAN ELECTRONICS CORPORATION |
| 英文描述： | CURRENT 3.0 AMPERES VOLTAGE 50 TO 600 VOLTS |
| 中文描述： | 3.0安培電流電壓50至600伏 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 119K |
| 代理商： | MR856G |
MR850G THRU MR856G
Features
Mechanical Data
· Plastic package has Underwrites Laboratory Flammability
Classification 94V-0
· Fast switching high efficiency
· Glass passivated junction
· High current capability
· High temperature soldering guaranteed:250
0.375"(9.5mm) lead length, 5 lbs.(2.3kg) tension.
/10 seconds,
Maximum Ratings And Electrical Characteristics
· Case : JEDEC DO-201AD molded plastic body
· Terminals : Plated axial lead solderable per MIL-STD-750,
method 2026
· Polarity : Color band denotes cathode end
· Mounting Position : Any
· Weight : 0.041 ounce, 1.18 grams
(Ratings at 25
load. For capacitive load, derate by 20%)
ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
CURRENT 3.0 Amperes
VOLTAGE 50 to 600 Volts
Notes:
(1) Test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A.
(2) Measured at 1MHz and applied reverse voltage of 4.0 Volts.
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Volts
Peak forward surge current 10ms single half
sine-wave superimposed on rated load at
(JEDEC method)
V
DC
Maximum average forward rectified current
R load at T
A
=90
Maximum instantaneous forward voltage
at 3.0A
V
RRM
Volts
Symbols
Units
1.25
V
F
V
RMS
3.0
Amps
Amps
100.0
I
FSM
T
J
T
STG
30
-65 to +175
Volts
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse recovery time (Note 1)
Typical junction capacitance (Note 2)
Operating junction and storage
temperature range
50
MR850G
35
50
5.0
Volts
A
ns
pF
I
(AV)
I
R
Trr
25.0
C
J
100
MR851G
70
100
200
MR852G
140
200
400
MR854G
280
400
Max.thermal resistance
150
R
JA
/W
T
A
=25
T
A
=125
100
600
MR856G
420
600
Dimensions in inches and (millimeters)
DO-201AD
1.0(25.4)
MIN.
1.0(25.4)
MIN.
0.375(9.5)
0.285(7.2)
0.042(1.1)
0.037(0.9)
DIA.
0.210(5.3)
0.188(4.8)
DIA.
相關(guān)PDF資料 |
PDF描述 |
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| MR850 | SOFT RECOVERU, FAST SWITCHING PLASTIC RECTIFIER |
| MR850 | FAST RECOVERY POWER RECTIFIERS 50.600 VOLTS 3.0 AMPERES |
| MR851 | FAST RECOVERY POWER RECTIFIERS 50.600 VOLTS 3.0 AMPERES |
| MR850 | FAST RECOVERY RECTIFIER DIODES |
| MR851 | FAST RECOVERY RECTIFIER DIODES |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR856G | 制造商:ON Semiconductor 功能描述:Fast Recovery Power Rectifier |
| MR856RL | 功能描述:整流器 600V 3A Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MR856RLG | 功能描述:整流器 600V 3A Fast RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MR858 | 功能描述:整流器 3.0 Amp 800 Volt 150ns RoHS:否 制造商:Vishay Semiconductors 產(chǎn)品:Standard Recovery Rectifiers 配置: 反向電壓:100 V 正向電壓下降: 恢復(fù)時間:1.2 us 正向連續(xù)電流:2 A 最大浪涌電流:35 A 反向電流 IR:5 uA 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-221AC 封裝:Reel |
| MR858 R0 | 制造商:SKMI/Taiwan 功能描述:Diode Switching 800V 3A 2-Pin DO-201AD T/R |
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