參數(shù)資料
型號(hào): MR760G
廠商: ON SEMICONDUCTOR
元件分類(lèi): 參考電壓二極管
英文描述: High Current Lead Mounted Rectifiers
中文描述: 6 A, 1000 V, SILICON, RECTIFIER DIODE
封裝: LEAD FREE, PLASTIC, CASE 194-04, 2 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大小: 104K
代理商: MR760G
MR750 SERIES
http://onsemi.com
2
MAXIMUM RATINGS
Characteristic
Symbol
MR750
MR751
MR752
MR754
MR756
MR760
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
50
100
200
400
600
1000
V
NonRepetitive Peak Reverse Voltage
(Halfwave, single phase, 60 Hz peak)
V
RSM
60
120
240
480
720
1200
V
RMS Reverse Voltage
V
R(RMS)
35
70
140
280
420
700
V
Average Rectified Forward Current
(Single phase, resistive load, 60 Hz)
(See Figures 5 and 6)
I
O
22 (T
L
= 60
°
C, 1/8 in Lead Lengths)
6.0 (T
A
= 60
°
C, P.C. Board mounting)
A
NonRepetitive Peak Surge Current
(Surge applied at rated load conditions)
I
FSM
400 (for 1 cycle)
A
Operating and Storage Junction
Temperature Range
T
J
, T
stg
65 to +175
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS
Characteristic and Conditions
Symbol
Max
Unit
Maximum Instantaneous Forward Voltage Drop (i
F
= 100 A, T
J
= 25
°
C)
Maximum Forward Voltage Drop (I
F
= 6.0 A, T
A
= 25
°
C, 3/8 in leads)
v
F
V
F
1.25
V
0.90
V
Maximum Reverse Current
(Rated DC Voltage)
T
J
= 25
°
C
T
J
= 100
°
C
I
R
25
1.0
A
mA
相關(guān)PDF資料
PDF描述
MR760RL High Current Lead Mounted Rectifiers
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