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| 型號： | MR3025G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 整流器 |
| 英文描述： | 25 A, 250 V, SILICON, RECTIFIER DIODE |
| 封裝： | MICRODE BUTTON, 2 PIN |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 104K |
| 代理商： | MR3025G |
TRA2525, MR3025
http://onsemi.com
608
Figure 6. Thermal Response
t, TIME (ms)
300
10
1
Figure 7. Typical Capacitance
VR, REVERSE VOLTAGE (V)
100
10
1
0.1
10
100
1000
Figure 8. Forward Recovery Time
Figure 9. Reverse Recovery Time
IF, FORWARD CURRENT (A)
IR/IF, RATIO OF REVERSE TO FORWARD CURRENT
10
1
0.1
1
10
1
0.1
1
10
100
C,
CAP
ACIT
ANCE
(pF)
T
r(t),
TRANSIENT
THERMAL
RESIST
ANCE
100
0.1
101
102
100
TJ = 25°C
,FOR
W
ARD
RECOVER
Y
TIME
(
s)m
FR
VFR = 2.0 V
VFR = 1.0 V
,REVERSE
RECOVER
Y
TIME
(
s)m
RR
IF = 1 A
IF = 10 A
RqJC(t) = RqJC r(t)
Note 1
To determine maximum junction temperature of the diode in a given
situation, the following procedure is recommended.
The temperature of the case should be measured using a thermocou-
ple placed on the case at the temperature reference point (see the
outline drawing on page 1). The thermal mass connected to the case
is normally large enough so that it will not significantly respond to heat
surges generated in the diode as a result of pulse operation once
steady state conditions are achieved.
Using the measured value of TC, the junction temperature may be
determined by:
Where
DTJC is the increase in junction temperature above the case
temperature, it may be determined by:
DUTY CYCLE, D = tp/t1
PEAK POWER, Ppk is peak of an
equivalent square power pulse
Ppk
tp
t1
where:
NOTE 1
TJ = TC + DTJC
DTJC = Ppk @ RqJC [D + (1 D) @ r(t1 + tp) + r(tp) r(t1)]
r(t) = normalized value of transient thermal resistance at
time, t, from Figure 6, i.e.:
VF
TJ = 25°C
TFR
VFR
TJ = 25°C
TRR
IR
0.25 IR
IF
r(t1 + tp) = normalized value of transient thermal resistance
at time t1 + tp.
0
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