參數資料
型號： MR2A08ACTS35C
廠商： 飛思卡爾半導體(中國)有限公司
英文描述： 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
中文描述： 256K x 16位的3.3V異步磁阻隨機存取內存
文件頁數： 1/22頁
文件大?。?/td> 154K
代理商： MR2A08ACTS35C
Freescale Semiconductor, Inc., 2004, 2006, 2007. All rights reserved.
Freescale Semiconductor
Data Sheet
Document Number: MR2A16A
Rev. 4, 6/2007
Introduction
TheMR2A16Aisa4,194,304-bitmagnetoresistive
random access memory (MRAM) device
organized as 262,144 words of 16 bits. The
MR2A16A is equipped with chip enable (E), write
enable (W), and output enable (G) pins, allowing
for significant system design flexibility without bus
contention. Because the MR2A16A has separate
byte-enable controls (LB and UB), individual bytes
can be written and read.
MRAM is a nonvolatile memory technology that
protects data in the event of power loss and does
not require periodic refreshing. The MR2A16A is
the ideal memory solution for applications that
must permanently store and retrieve critical data
quickly.
The MR2A16A is available in a 400-mil, 44-lead
plastic small-outline TSOP type-II package with an
industry-standardcenterpowerandgroundSRAM
pinout.
The MR2A16A is available in Commercial (0C to
70C), Industrial (
-
40C to 85C) and Extended
(
-
40C to 105C) ambient temperature ranges.
Features
Single 3.3-V power supply
Commercial temperature range (0C to
70C), Industrial temperature range (
-
40C
to 85C) and Extended temperature range
(
-
40C to 105C)
Symmetrical
high-speed read and write with
fast access time (35 ns)
Flexible data bus control — 8 bit or 16 bit
access
Equal address and chip-enable access
times
Automatic data protection with low-voltage
inhibit circuitry to prevent writes on power
loss
All inputs and outputs are
transistor-transistor logic (TTL) compatible
Fully static operation
Full nonvolatile operation with 20 years
minimum data retention
256K x 16-Bit 3.3-V
Asynchronous
Magnetoresistive RAM
MR2A16A
44-TSOP
Case 924A-02
相關PDF資料
PDF描述
MR2A08ACYS35 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A08AVYS35 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16ACTS35C 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16ACYS35 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
MR2A16AVYS35 64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM
相關代理商/技術參數
參數描述
MR2A08ACYS35 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
MR2A08ACYS35R 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
MR2A08AMA35 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
MR2A08AMA35R 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
MR2A08AMYS35 功能描述:NVRAM 4Mb 3.3V 35ns 512Kx8 Parallel MRAM RoHS:否 制造商:Maxim Integrated 數據總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube
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