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參數(shù)資料
| 型號： | MR1S16AYS35 |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 存儲器 |
| 英文描述： | SPECIALTY MEMORY CIRCUIT, PDSO44 |
| 封裝： | 0.400 INCH, ROHS COMPLIANT, PLASTIC, TSOP2-44 |
| 文件頁數(shù)： | 17/22頁 |
| 文件大?。?/td> | 235K |
| 代理商： | MR1S16AYS35 |
MR0A16A Advanced Information Data Sheet, Rev. 2
4
Freescale Semiconductor
Electrical Specifications
Table 3. Absolute Maximum Ratings
1
Parameter
Symbol
Value
Unit
Supply voltage2
VDD
–0.5 to 4.0
V
Voltage on any pin2
VIn
–0.5 to VDD + 0.5
V
Output current per pin
IOut
±20
mA
Package power dissipation3
PD
0.600
W
Temperature under bias
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
TBias
–10 to 85
–45 to 95
–45 to 110
°C
Storage temperature
Tstg
–55 to 150
°C
Lead temperature during solder (3 minute max)
TLead
260
°C
Maximum magnetic field during write
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
Hmax_write
15
25
Oe
Maximum magnetic field during read or standby
Hmax_read
100
Oe
NOTES:
1
Permanent device damage may occur if absolute maximum ratings are exceeded. Functional operation
should be restricted to recommended operating conditions. Exposure to excessive voltages or magnetic fields
could affect device reliability.
2
All voltages are referenced to VSS.
3
Power dissipation capability depends on package characteristics and use environment.
Table 4. Operating Conditions
Parameter
Symbol
Min
Typ
Max
Unit
Power supply voltage
VDD
3.01
3.3
3.6
V
Write inhibit voltage
VWI
2.5
2.7
3.01
V
Input high voltage
VIH
2.2
—
VDD +
0.32
V
Input low voltage
VIL
–0.53
—0.8
V
Operating temperature
MR0A16AYS35 (Commercial)
MR0A16ACYS35 (Industrial)
MR0A16AVYS35 (Extended)
TA
0
-40
70
85
105
°C
NOTES:
1
After power up or if VDD falls below VWI, a waiting period of 2 ms must be observed, and E and W
must remain high for 2 ms. Memory is designed to prevent writing for all input pin conditions if VDD
falls below minimum VWI.
2
VIH (max) = VDD + 0.3 Vdc; VIH (max) = VDD + 2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
3
VIL (min) = –0.5 Vdc; VIL (min) = –2.0 Vac (pulse width ≤ 10 ns) for I ≤ 20.0 mA.
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