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參數(shù)資料
| 型號： | MR0A16ACYS35 |
| 廠商： | 飛思卡爾半導(dǎo)體(中國)有限公司 |
| 英文描述： | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
| 中文描述： | 256K x 16位的3.3V異步磁阻隨機存取內(nèi)存 |
| 文件頁數(shù)： | 10/22頁 |
| 文件大?。?/td> | 154K |
| 代理商： | MR0A16ACYS35 |
MR2A16A Data Sheet, Rev. 4
10
Freescale Semiconductor
Timing Specifications
Write Mode
Table 10. Write Cycle Timing 1 (W Controlled)
1, 2, 3, 4, 5
Parameter
Symbol
t
AVAV
t
AVWL
t
AVWH
t
AVWH
t
WLWH
t
WLEH
t
WLWH
t
WLEH
t
DVWH
t
WHDX
t
WLQZ
t
WHQX
t
WHAX
Min
35
0
18
20
Max
—
—
—
—
Unit
ns
ns
ns
ns
Write cycle time
6
Address set-up time
Address valid to end of write (G high)
Address valid to end of write (G low)
Write pulse width (G high)
15
—
ns
Write pulse width (G low)
15
—
ns
Data valid to end of write
Data hold time
Write low to data Hi-Z
7, 8, 9
Write high to output active
7, 8, 9
Write recovery time
10
0
0
3
12
—
—
12
—
—
ns
ns
ns
ns
ns
NOTES:
1
A write occurs during the overlap of E low and W low.
Due to product sensitivities to noise, power supplies must be properly grounded and decoupled and
bus contention conditions must be minimized or eliminated during read and write cycles.
If G goes low at the same time or after W goes low, the output will remain in a high-impedance state.
After W, E, or UB/LB has been brought high, the signal must remain in steady-state high for a minimum
of 2 ns.
The minimum time between E being asserted low in one cycle to E being asserted low in a subsequent
cycle is the same as the minimum cycle time allowed for the device.
All write cycle timings are referenced from the last valid address to the first transition address.
This parameter is sampled and not 100% tested.
Transition is measured
±
200 mV from steady-state voltage.
At any given voltage or temperature, t
WLQZ
max < t
WHQX
min.
2
3
4
5
6
7
8
9
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| MR0S08AVTS35C | 256K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MR0A16ACYS35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A16AMA35 | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A16AMA35R | 功能描述:NVRAM 1Mb 3.3V 64Kx16 35ns Parallel MRAM RoHS:否 制造商:Maxim Integrated 數(shù)據(jù)總線寬度:8 bit 存儲容量:1024 Kbit 組織:128 K x 8 接口類型:Parallel 訪問時間:70 ns 電源電壓-最大:5.5 V 電源電壓-最小:4.5 V 工作電流:85 mA 最大工作溫度:+ 70 C 最小工作溫度:0 C 封裝 / 箱體:EDIP 封裝:Tube |
| MR0A16AMYS35 | 制造商:Everspin Technologies 功能描述:IC MRAM 1MBIT 35NS 44TSOP |
| MR0A16AMYS35R | 制造商:Everspin Technologies 功能描述:IC MRAM 1MBIT 35NS 44TSOP |
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