參數(shù)資料
型號(hào)： MQUPS5817E3
廠商： MICROSEMI CORP-SCOTTSDALE
元件分類： 二極管(射頻、小信號(hào)、開(kāi)關(guān)、功率)
英文描述： 1 A, SILICON, SIGNAL DIODE, DO-216AA
封裝： ROHS COMPLIANT, PLASTIC, POWERMITE 1, DO-216, 1 PIN
文件頁(yè)數(shù)： 1/4頁(yè)
文件大?。?/td> 296K
代理商： MQUPS5817E3
POWERMITE 1 SURFACE MOUNT
1 AMP 20 and 40 V SCHOTTKY RECTIFIERS
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
UPS5817e3 and UPS5819e3
UPS581
7e3
&
UPS581
9e3
DESCRIPTION
APPEARANCE
The UPS5817e3 and UPS5819e3 offer a small and powerful surface mount
package that is RoHS compliant for a 1 Amp rated Schottky. These ratings
are found only in much larger packages. They are ideal for surface mount
applications that operate at high frequencies with their “hot carrier” features
that provide extremely fast switching. The very low thermal resistance of the
patented Powermite 1 package design with a full metallic bottom and
unique locking tab act as an efficient heat path to a heat sink mounting permitting
cooler operating junction temperatures for minimal reverse leakage currents
and lower power loss. It is also ideal for automatic insertion equipment.
DO-216
Powermite 1
IMPORTANT:
For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
APPLICATIONS / BENEFITS
Low profile DO-216 package (<1.1 mm)
RoHS compliant with e3 suffix part number
Small footprint area of 8.45 mm
2
Plastic package has Underwriters Laboratory
Flammability classification 94V-0
Unique locking tab on bottom acts as integral efficient
heat path to heat sink (mounting substrate)
Metal to silicon rectifier, majority carrier conduction
Options for screening in accordance with MIL-PRF-
19500 for JAN, JANTX, and JANTXV are available by
adding MQ, MX, or MV prefixes respectively to part
numbers. For example, designate a MXUPS5819e3
for a JANTX screen. Consult factory for Tin-Lead
plating
.
Optional avionics screening available by adding MA
prefix for 100% temperature cycling, thermal
impedance testing, and 24 hours HTRB. For example,
designate a MAUPS5819e3. Consult factory for Tin-
Lead plating
.
High current capability with low forward voltage
Guard-ring-die construction for transient protection
Silicon Schottky (hot carrier) rectifier for minimal trr
and minimal reverse recovery voltage
Elimination of reverse-recovery oscillations to
reduce need for EMI filtering
For use in high-frequency switching power supplies,
inverters, free wheeling, charge pump circuits and
polarity protection applications
Lower forward power loss and high efficiency
Low inductive parasitics (<2nH) for minimal Ldi/dt
effects
Robust package configuration for pick-and-place
handling
Full-metallic bottom eliminates flux entrapment
Small foot print with 0.100 x 0.160 inches (see
mounting pad details on last page)
MAXIMUM RATINGS
MECHANICAL AND PACKAGING
Storage temperature (TSTG): -55
oC to +150oC
Operating junction temperature (TJ ): -55
oC to +150oC
Average forward rectified current (IO) @TC=100
oC: 1.0
Amp
Forward surge current (IFSM) 8.3 ms single half-sine
waveform superimposed on rated load (JEDEC
Method): 50 Amps
Thermal resistance junction to case (bottom): 10
oC/W
Thermal resistance (RθJA): 240
oC/W on PCB with FR4
using 1 oz Copper and recommended mounting pad
size (see pad layout next page)
Solder temperatures: 260
C for 10 s (maximum)
Terminals: Copper with annealed matte-Tin plating
for RoHS compliance solderable per MIL-STD-750
method 2026 (consult factory for Tin-Lead plating
.)
Polarity: Backside is cathode
Marking: UPS5817e3 marked with S17
and UPS5819e3 marked with S19
Molded epoxy package meets UL94V-0
Weight: 0.016 grams (approximate)
Tape & Reel option: 12 mm tape per EIA-481-B
3000 units on 7 inch reel and 12,000 on 13” reel
(add TR7 or TR13 respectively to part number)
See package dimensions on last page
Microsemi
Scottsdale Division
Page 1
Copyright
2007
6-26-2007 REV C
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料
PDF描述
MXUPS5817E3TR7 1 A, SILICON, SIGNAL DIODE, DO-216AA
MLL748 3.9 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
MQHSMBJ5916-TR 4.3 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
MQHSMBJ5956-TR 200 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
MXHSMBJ5951-TR 120 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-214AA
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