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參數(shù)資料
| 型號： | MQSMBG7.0AE3 |
| 廠商： | MICROSEMI CORP-SCOTTSDALE |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| 封裝： | ROHS COMPLIANT, PLASTIC PACKAGE-2 |
| 文件頁數(shù)： | 4/4頁 |
| 文件大?。?/td> | 182K |
| 代理商： | MQSMBG7.0AE3 |
SURFACE MOUNT 600 Watt
Transient Voltage Suppressor
WWW
.Microse
m
i
.CO
M
S C O T TS DALE DIVISION
SMBJ5.0 thru SMBJ170A, CA, e3
and SMBG5.0 thru SMBG170A, CA, e3
SMB5.0–
170AC,
e3
GRAPHS
50
30
10
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
P
PP
–
Peak
Pulse
Power
–
kW
TC = 25
oC
0.1 0.2
0.5
1.0
2.0
5.0
10
20
50 100 200
1000
10,000
Test waveform parameters: tr=10
μs, tw=1000 μs
tw – Pulse Width -
μs
FIGURE 2
FIGURE 1
Pulse Waveform for
Peak Pulse Power vs. Pulse Time
Exponential Surge
PAD LAYOUT
INCHES
mm
A
.260
6.60
B
.085
2.16
C
.110
2.79
INCHES
mm
A
0.320
8.13
B
0.085
2.16
C
0.110
2.79
C
–
Ca
pa
cita
nce
-
Pi
cofarads
Microsemi
Scottsdale Division
Page 4
Copyright
2007
6-20-2007 REV H
TL Lead Temperature
oC
V(BR) - Breakdown Voltage – Volts
Peak
Pulse
Power
(
P
PP
)or
conti
nuous
Power
in
P
ercent
of
25
o C
Rating
SMBJ
SMBG
FIGURE 3 -
Derating Curve
FIGURE 4
Typical Capacitance vs Breakdown Voltage
PACKAGE DIMENSIONS
A
B
C
D
E
F
K
L
MIN
.077
.160
.130
.205
.077
.235
.015
.030
MAX
.083
.180
.155
.220
.104
.255
.030
.060
DIMENSIONS IN MILLIMETERS
MIN
1.96
4.06
3.30
5.21
1.95
5.97
.381
.760
MAX
2.10
4.57
3.94
5.59
2.65
6.48
.762
1.520
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
相關(guān)PDF資料 |
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| MQSMBG7.0AE3TR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| MQSMBG7.0CAE3 | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| MQSMBG7.0E3 | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| MQSMBG7.0E3TR | 600 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
| MQSMBG7.5CE3TR | 600 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-215AA |
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