參數(shù)資料
型號： MPC8360ECVVAJDGA
廠商： Freescale Semiconductor
文件頁數(shù)： 14/102頁
文件大?。?/td> 0K
描述： IC MPU POWERQUICC II PRO 740TBGA
標(biāo)準(zhǔn)包裝： 21
系列： MPC83xx
處理器類型： 32-位 MPC83xx PowerQUICC II Pro
速度： 533MHz
電壓： 1.2V
安裝類型： 表面貼裝
封裝/外殼： 740-LBGA
供應(yīng)商設(shè)備封裝： 740-TBGA（37.5x37.5）
包裝： 托盤
配用： MPC8360EA-MDS-PB-ND - KIT APPLICATION DEV 8360 SYSTEM
MPC8360E-RDK-ND - BOARD REFERENCE DESIGN FOR MPC
MPC8360E/MPC8358E PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications, Rev. 5
Freescale Semiconductor
19
DDR and DDR2 SDRAM DC Electrical Characteristics
6.1
DDR and DDR2 SDRAM DC Electrical Characteristics
This table provides the recommended operating conditions for the DDR2 SDRAM component(s) of the device when
GVDD(typ) = 1.8 V.
This table provides the DDR2 capacitance when GVDD(typ) = 1.8 V.
This table provides the recommended operating conditions for the DDR SDRAM component(s) of the device when
GVDD(typ) = 2.5 V.
Table 14. DDR2 SDRAM DC Electrical Characteristics for GVDD(typ) = 1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
1.71
1.89
V
1
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V
2
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
3
Input high voltage
VIH
MVREF + 0.125
GVDD + 0.3
V
—
Input low voltage
VIL
–0.3
MVREF – 0.125
V
—
Output leakage current
IOZ
—±10
μA
4
Output high current (VOUT = 1.420 V)
IOH
–13.4
—
mA
—
Output low current (VOUT = 0.280 V)
IOL
13.4
—
mA
—
MVREF input leakage current
IVREF
—±10
μA—
Input current (0 V
≤VIN ≤OVDD)IIN
—±10
μA—
Notes:
1. GVDD is expected to be within 50 mV of the DRAM GVDD at all times.
2. MVREF is expected to equal 0.5 × GVDD, and to track GVDD DC variations as measured at the receiver. Peak-to-peak noise
on MVREF cannot exceed ±2% of the DC value.
3. VTT is not applied directly to the device. It is the supply to which far end signal termination is made and is expected to equal
MVREF. This rail should track variations in the DC level of MVREF.
4. Output leakage is measured with all outputs disabled, 0 V
≤V
OUT ≤GVDD.
Table 15. DDR2 SDRAM Capacitance for GVDD(typ)=1.8 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 1.8 V ± 0.090 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 16. DDR SDRAM DC Electrical Characteristics for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
I/O supply voltage
GVDD
2.375
2.625
V
I/O reference voltage
MVREF
0.49
× GVDD
0.51
× GVDD
V
I/O termination voltage
VTT
MVREF – 0.04
MVREF + 0.04
V
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPC8360ECVVAJDHA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVAJFGA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVAJFHA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVALDGA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
MPC8360ECVVALDHA 制造商:FREESCALE 制造商全稱:Freescale Semiconductor, Inc 功能描述:PowerQUICC II Pro Processor Revision 2.x TBGA Silicon Hardware Specifications
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