參數(shù)資料
型號(hào): MPXV2202DP
廠商: MOTOROLA INC
元件分類: 壓力傳感器
英文描述: Sensor
中文描述: DIFFERENTIAL, PEIZORESISTIVE PRESSURE SENSOR, 0-14.5Psi, 0.4%, 0-40mV, SQUARE, SURFACE MOUNT
封裝: CASE 1351, 8 PIN
文件頁(yè)數(shù): 17/670頁(yè)
文件大小: 6375K
代理商: MPXV2202DP
1–11
Motorola Sensor Device Data
For More Information On This Product,
Go to: www.freescale.com
Electrostatic Discharge Data
Electrostatic damage (ESD) to semiconductor devices has
plagued the industry for years. Special packaging and
handling techniques have been developed to protect these
sensitive devices. While many of Motorola’s semiconductors
devices are not susceptible to ESD, all products are revered
as sensitive and handled accordingly.
The data in this section was developed using the
human-body model specified in MIL-STD-750C, Method
1020. The threshold values (Eth, kV) of ten devices was
recorded, then the average value calculated. This data plus
the device type, device source, package type, classification,
polarity and general device description are supplied. Devices
listed are mainly JEDEC registered 1N and 2N numbers.
Military QPL devices and some customer specials are also in
this database. The data in this report will be updated
regularly, and the range will be added as new data becomes
available.
The sensitivity classifications listed are as follows:
Class 1 . . .1 to 1999 volts
Class 2 . . .2000 to 3999 volts
Class 3 . . .4000 to > 15500 volts
The code “N/S” signifies a non-sensitive device. “SEN” are
considered sensitive and should be handled according to
ESD procedures. Of the various products manufactured by
the Communications, Power and Signal Technologies
Group, the following examples list general device families by
not sensitive to extremely sensitive.
Not sensitive
FET current regulators
. . . . . .
Least sensitive
Zener diodes (on a square
. . . .
mil/millijoule basis)
Less sensitive
Bipolar transistors
. . . . .
More sensitive
Bipolar darlington transistors
Power TMOS
devices
. . . .
Very sensitive
. . . . .
Extremely sensitive Hot carrier diodes and MOSFET
transistors without gate protection
The data supplied herein, is listed in numerical or
alphabetical order.
DEVICE
LINE
CASE
CLASS
PRODUCT DESCRIPTION
MPX10D
XL0010V1
344–15
3–SEN
Uncompensated
MPX10DP
XL0010V1
344C–01
3–SEN
Uncompensated
MPX10GP
XL0010V1
344B–01
3–SEN
Uncompensated
MPX12D
XL0012V1
344–15
3–SEN
Uncompensated
MPX12DP
XL0012V1
344C–01
3–SEN
Uncompensated
MPX12GP
XL0012V1
344B–01
3–SEN
Uncompensated
MPX2010D
XL2010V5
344–15
1–SEN
Temperature Compensated/Calibrated
MPX2010DP
XL2010V5
344C–01
1–SEN
Temperature Compensated/Calibrated
MPX2010GP
XL2010V5
344B–01
1–SEN
Temperature Compensated/Calibrated
MPX2010GS
XL2010V5
344E–01
1–SEN
Temperature Compensated/Calibrated
MPX2010GSX
XL2010V5
344F–01
1–SEN
Temperature Compensated/Calibrated
MPX2300DT1
XL2300C1,01C1
423–05
1–SEN
Temperature Compensated/Calibrated
MPX4100A
XL4101S2
867–08
1–SEN
Signal–Conditioned
MPX4100AP
XL4101S2
867B–04
1–SEN
Signal–Conditioned
MPX4100AS
XL4101S2
867E–03
1–SEN
Signal–Conditioned
MPX4101A
XL4101S2
867–08
1–SEN
Signal–Conditioned
MPX4115A
XL4101S2
867–08
1–SEN
Signal–Conditioned
MPX4115AP
XL4101S2
867B–04
1–SEN
Signal–Conditioned
MPX4115AS
XL4101S2
867E–03
1–SEN
Signal–Conditioned
MPX4250A
XL4101S2
867–08
1–SEN
Signal–Conditioned
MPX4250AP
XL4101S2
867B–04
1–SEN
Signal–Conditioned
MPX5010D
XL4010S5
867–08
1–SEN
Signal–Conditioned
MPX5010DP
XL4010S5
867C–05
1–SEN
Signal–Conditioned
MPX5010GP
XL4010S5
867B–04
1–SEN
Signal–Conditioned
MPX5010GS
XL4010S5
867E–03
1–SEN
Signal–Conditioned
MPX5010GSX
XL4010S5
867F–03
1–SEN
Signal–Conditioned
F
Freescale Semiconductor, Inc.
n
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