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參數(shù)資料
| 型號(hào)： | MPTE-8RL4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大小： | 85K |
| 代理商： | MPTE-8RL4G |
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
2
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak Power Dissipation (Note 1)
@ T
L
≤
25
°
C
P
PK
1500
W
Steady State Power Dissipation @ T
L
≤
75
°
C, Lead Length = 3/8
″
Derated above T
L
= 75
°
C
P
D
5.0
20
W
mW/
°
C
Thermal Resistance, JunctiontoLead
R
JL
20
°
C/W
Forward Surge Current (Note 2)
@ T
A
= 25
°
C
I
FSM
200
A
Operating and Storage Temperature Range
T
J
, T
stg
65 to +175
°
C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Nonrepetitive current pulse per Figure 5 and derated above T
A
= 25
°
C per Figure 2.
2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
*Please see 1N6382 – 1N6389 (ICTE10C ICTE36C, MPTE8C MPTE45C) for Bidirectional Devices.
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Variation of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
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