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參數(shù)資料
| 型號： | MPTE-45RL4G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | LEAD FREE, PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 85K |
| 代理商： | MPTE-45RL4G |
1N6373 1N6381 Series (ICTE5 ICTE36, MPTE5 MPTE45)
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3)
= 100 A)
JEDEC
Device
(ON Device)
Device
Marking
V
RWM
(Note 4)
I
R
@
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 6)
V
C
(Volts)
(Note 6)
V
BR
V
BR
(Note 5
)
(Volts)
@ I
T
V
C
I
PP
@ I
PP
=
1 A
@ I
PP
=
10 A
(Volts)
( A)
Min
Nom
Max
(mA)
(Volts)
(A)
(mV/
°
C)
1N6373, G
(MPTE5, G)
1N6373
MPTE5
5.0
300
6.0
1.0
9.4
160
7.1
7.5
4.0
1N6374, G
(MPTE8, G)
1N6374
MPTE8
8.0
25
9.4
1.0
15
100
11.3
11.5
8.0
1N6375, G
(MPTE10,G)
1N6375
MPTE10
10
2.0
11.7
1.0
16.7
90
13.7
14.1
12
1N6376, G
(MPTE12, G)
1N6376
MPTE12
12
2.0
14.1
1.0
21.2
70
16.1
16.5
14
1N6377, G
(MPTE15, G)
1N6377
MPTE15
15
2.0
17.6
1.0
25
60
20.1
20.6
18
1N6379, G
(MPTE22, G)
1N6379
MPTE22
22
2.0
25.9
1.0
37.5
40
29.8
32
26
1N6380, G
(MPTE36, G)
1N6380
MPTE36
36
2.0
42.4
1.0
65.2
23
50.6
54.3
50
1N6381, G
(MPTE45, G)
1N6381
MPTE45
45
2.0
52.9
1.0
78.9
19
63.3
70
60
ICTE5, G
ICTE10, G
ICTE12, G
ICTE5
ICTE10
ICTE12
5.0
10
12
300
2.0
2.0
6.0
11.7
14.1
1.0
1.0
1.0
9.4
16.7
21.2
160
90
70
7.1
13.7
16.1
7.5
14.1
16.5
4.0
8.0
12
ICTE15, G
ICTE18, G
ICTE22, G
ICTE36, G
3. Square waveform, PW = 8.3 ms, nonrepetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to or
greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
°
C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
The “G’’ suffix indicates PbFree package available.
ICTE15
ICTE18
ICTE22
ICTE36
15
18
22
36
2.0
2.0
2.0
2.0
17.6
21.2
25.9
42.4
1.0
1.0
1.0
1.0
25
30
37.5
65.2
60
50
40
23
20.1
24.2
29.8
50.6
20.6
25.2
32
54.3
14
18
21
26
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPTE-5G | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-5RL4 | 1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MR16R1622 | Key Timing Parameters |
| MR18R16224DF0 | Key Timing Parameters |
| MR18R16228DF0 | Key Timing Parameters |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPTE-5 | 功能描述:DIODE TVS 5V 1500W UNI DO-201AD RoHS:否 類別:過電壓，電流，溫度裝置 >> TVS - 二極管 系列:MPTE 標(biāo)準包裝:3,000 系列:- 電壓 - 反向隔離（標(biāo)準值）:4V 電壓 - 擊穿:5V 功率（瓦特）:429W 電極標(biāo)記:單向 安裝類型:表面貼裝 封裝/外殼:3-WDFN 供應(yīng)商設(shè)備封裝:LLP75-3B 包裝:帶卷 (TR) |
| MPTE-5 (1N6373) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-5C | 制造商:NJSEMI 制造商全稱:New Jersey Semi-Conductor Products, Inc. 功能描述:1500 WATT LOW CLAMPING FACTOF TRANSIENT VOLTAGE SUPPRESSO |
| MPTE-5G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-5RL4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 5V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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