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參數(shù)資料
| 型號： | MPTE-45 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, MOSORB, CASE 41A-04, 2 PIN |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 60K |
| 代理商： | MPTE-45 |
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
http://onsemi.com
3
Figure 1. Pulse Rating Curve
100
80
60
40
20
0
0
25
50
75
T
A
, AMBIENT TEMPERATURE (
°
C)
100
125
150
175
200
P
P
°
Figure 2. Pulse Derating Curve
5
4
3
2
1
25
50
75
T
L
, LEAD TEMPERATURE (
°
C)
100
125
150
175
200
PD
3/8
″
3/8
″
0
0
100
50
0
0
1
2
3
4
t, TIME (ms)
,
I
t
r
≤
10 s
t
P
PEAK VALUE - I
PP
HALF VALUE -
I
PP
2
PULSE WIDTH (t
P
) IS DEFINED AS
THAT POINT WHERE THE PEAK
CURRENT DECAYS TO 50% OF I
PP
.
1 s
10 s
100 s
1 ms
10 ms
100
10
1
t
P
, PULSE WIDTH
PP
NONREPETITIVE
PULSE WAVEFORM
SHOWN IN FIGURE 5
0.1 s
Figure 3. Capacitance versus Breakdown Voltage
Figure 4. Steady State Power Derating
Figure 5. Pulse Waveform
1N6373, ICTE-5, MPTE-5,
through
1N6389, ICTE-45, C, MPTE-45, C
V
BR
, BREAKDOWN VOLTAGE (VOLTS)
1
10
100
1000
10,000
1000
C
100
10
MEASURED @
ZERO BIAS
MEASURED @ V
RWM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPTE-45 (1N6381) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-45C | 制造商:MDE 制造商全稱:MDE Semiconductor, Inc. 功能描述:GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
| MPTE-45C (1N6389) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-45G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-45RL4 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
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