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參數(shù)資料
| 型號(hào)： | MPTE-18 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 參考電壓二極管 |
| 英文描述： | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| 中文描述： | 1500 W, UNIDIRECTIONAL, SILICON, TVS DIODE |
| 封裝： | PLASTIC, 2 PIN |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | MPTE-18 |
Uni–Directional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1N6373 – 1N6381 Series (ICTE–5 – ICTE–36, MPTE–5 – MPTE–45)
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3.) = 100 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
V
BR
Maximum Temperature Variation of V
BR
I
F
Forward Current
V
F
Forward Voltage @ I
F
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 3.)
= 100 A)
V
RWM
(Note 4.)
I
R
@
V
RWM
Breakdown Voltage
V
C
@ I
PP
(Note 6.)
V
C
(Volts)
(Note 6.)
JEDEC
Device
(ON Device)
Device
Marking
V
BR
(Note 5.
)
(Volts)
@ I
T
V
C
I
PP
@ I
PP
=
1 A
@ I
PP
=
10 A
V
BR
(Volts)
( A)
Min
Nom
Max
(mA)
(Volts)
(A)
(mV/
°
C)
1N6373
(MPTE–5)
1N6373
MPTE–5
5.0
300
6.0
–
–
1.0
9.4
160
7.1
7.5
4.0
1N6374
(MPTE–8)
1N6374
MPTE–8
8.0
25
9.4
–
–
1.0
15
100
11.3
11.5
8.0
1N6375
(MPTE–10)
1N6375
MPTE–10
10
2.0
11.7
–
–
1.0
16.7
90
13.7
14.1
12
1N6376
(MPTE–12)
1N6376
MPTE–12
12
2.0
14.1
–
–
1.0
21.2
70
16.1
16.5
14
1N6377
(MPTE–15)
1N6377
MPTE–15
15
2.0
17.6
–
–
1.0
25
60
20.1
20.6
18
1N6378*
(MPTE–18)
1N6378*
MPTE–18
18
2.0
21.2
–
–
1.0
30
50
24.2
25.2
21
1N6379
(MPTE–22)
1N6379
MPTE–22
22
2.0
25.9
–
–
1.0
37.5
40
29.8
32
26
1N6380
(MPTE–36)
1N6380
MPTE–36
36
2.0
42.4
–
–
1.0
65.2
23
50.6
54.3
50
1N6381
(MPTE–45)
1N6381
MPTE–45
45
2.0
52.9
–
–
1.0
78.9
19
63.3
70
60
ICTE–5
ICTE–10
ICTE–12
ICTE–5
ICTE–10
ICTE–12
5.0
10
12
300
2.0
2.0
6.0
11.7
14.1
–
–
–
–
–
–
1.0
1.0
1.0
9.4
16.7
21.2
160
90
70
7.1
13.7
16.1
7.5
14.1
16.5
4.0
8.0
12
ICTE–15
ICTE–18
ICTE–22
ICTE–36
NOTES:
3. Square waveform, PW = 8.3 ms, Non–repetitive duty cycle.
4. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V
RWM
), which should be equal to
or greater than the dc or continuous peak operating voltage level.
5. V
BR
measured at pulse test current I
T
at an ambient temperature of 25
°
C and minimum voltage in V
BR
is to be controlled.
6. Surge current waveform per Figure 5 and derate per Figures 1 and 2.
*Not Available in the 1500/Tape & Reel
ICTE–15
ICTE–18
ICTE–22
ICTE–36
15
18
22
36
2.0
2.0
2.0
2.0
17.6
21.2
25.9
42.4
–
–
–
–
–
–
–
–
1.0
1.0
1.0
1.0
25
30
37.5
65.2
60
50
40
23
20.1
24.2
29.8
50.6
20.6
25.2
32
54.3
14
18
21
26
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPTE-22 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| MPTE-36 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| MPTE-45 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| MPTE-5 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| MPTE-8 | 1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPTE-18 (1N6378) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-18C | 制造商:MDE 制造商全稱(chēng):MDE Semiconductor, Inc. 功能描述:GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
| MPTE-18C (1N6386) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-22 | 制造商:ONSEMI 制造商全稱(chēng):ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
| MPTE-22 (1N6379) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
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