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參數(shù)資料
| 型號： | MPTE-12C |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 1500 W, BIDIRECTIONAL, SILICON, TVS DIODE, DO-201AD |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 153K |
| 代理商： | MPTE-12C |
1
s
0.1
1.0
10
100
1.0
s
1.0ms
10
s
10ms
100
s
td Pulse Width, sec.
Pppm
Peak
Pulse
Power
(Pp)
in
kW
1
100
1000
10,000
100,000
10
20
50
2
5
100 200
V(BR), Breakdown Voltage, Volts
C
junction
capacitance,
pF
TJ=25°C
f = 1.0 MHZ
Vsig= 50mVp-p
Measured at
Stand-Off
Voltage (VR)
Measured at
Zero Bias
Figure 1 - Peak Pulse Power Rating Curve
Figure 2 - Typical Junction Capacitance
All products are sold to the commercial specifications shown, for any additional reliability testing or extended parameters, please consult the factory.
contact semitron on: telephone: +44 (0)1793 724000 fax: +44 (0)1793 720401
29
Voltage
Packaging Option
B = Bulk (500 pcs)
T = Tape & reeled (1500 pcs)
Bi Directional
ICTE or MPTE
C
ORDERING INFORMATION
ICTE/MPTE series
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPTE-12C (1N6384) | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 - RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-12G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb TM Zener Transient Voltage Suppressors |
| MPTE-12RL4 | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12V 1500W RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-12RL4G | 功能描述:TVS 二極管 - 瞬態(tài)電壓抑制器 12V 1500W Unidirectional RoHS:否 制造商:Vishay Semiconductors 極性:Bidirectional 工作電壓: 擊穿電壓:58.9 V 鉗位電壓:77.4 V 峰值浪涌電流:38.8 A 系列: 封裝 / 箱體:DO-214AB 最小工作溫度:- 55 C 最大工作溫度:+ 150 C |
| MPTE-15 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:1500 Watt Peak Power Mosorb Zener Transient Voltage Suppressors |
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