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參數(shù)資料
| 型號(hào)： | MPSW92RLRP |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | CASE 29-10, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 132K |
| 代理商： | MPSW92RLRP |
One Watt High Voltage
Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
–300
Vdc
Collector–Base Voltage
VCBO
–300
Vdc
Emitter–Base Voltage
VEBO
–5.0
Vdc
Collector Current — Continuous
IC
–500
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watt
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
–55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
125
°C/W
Thermal Resistance, Junction to Case
RqJC
50
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–300
—
Vdc
Collector–Base Breakdown Voltage
(IC = –100 Adc, IE = 0)
V(BR)CBO
–300
—
Vdc
Emitter–Base Breakdown Voltage
(IE = –100 Adc, IC = 0)
V(BR)EBO
–5.0
—
Vdc
Collector Cutoff Current
(VCB = –200 Vdc, IE = 0)
ICBO
—
–0.25
Adc
Emitter Cutoff Current
(VEB = –3.0 Vdc, IC = 0)
IEBO
—
–0.1
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are ON Semiconductor recommended choices for future use and best overall value.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 2
926
Publication Order Number:
MPSW92/D
MPSW92
CASE 29–10, STYLE 1
TO–92 (TO–226AE)
1
2
3
ON Semiconductor Preferred Device
COLLECTOR
3
2
BASE
1
EMITTER
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