- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371138 > MPSW92 (ON SEMICONDUCTOR) One Watt High Voltage Transistor(PNP Silicon) PDF資料下載
參數(shù)資料
| 型號： | MPSW92 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | One Watt High Voltage Transistor(PNP Silicon) |
| 中文描述： | 500 mA, 300 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-226 |
| 封裝： | CASE 29-10, TO-92, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 134K |
| 代理商： | MPSW92 |
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted) (Continued)
Characteristic
ON CHARACTERISTICS(1)
Symbol
Min
Max
Unit
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
Collector–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
hFE
25
40
25
—
—
—
—
VCE(sat)
—
–0.5
Vdc
Base–Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
SMALL–SIGNAL CHARACTERISTICS
VBE(sat)
—
–0.9
Vdc
Current–Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 20 MHz)
fT
50
—
MHz
Collector–Base Capacitance
(VCB = –20 Vdc, IE = 0, f = 1.0 MHz)
Ccb
—
6.0
pF
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
Figure 1. DC Current Gain
Figure 2. Collector Saturation Region
–50
IC, COLLECTOR CURRENT (mA)
200
100
50
30
20
IB, BASE CURRENT (mA)
–0.5
–0.4
–0.3
–0.2
0
TJ = 125
°
C
h
–20
–0.5
–5.0
–0.1
–0.2
–1.0
–2.0
,
V
25
°
C
–1.0
–2.0
–10
–5.0
70
–10
–20 –30
–0.1
,
F
–3.0
–7.0
–30
–70 –100
–55
°
C
VCE = –10 V
–0.7
–0.6
TJ = 25
°
C
IC = –30 mA
IC = –10 mA
IC = –20 mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MPX10 | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX10GVP | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX10DP | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX10GP | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
| MPX10GS | 0 to 10 kPa (0-1.45 psi) 35 mV FULL SCALE SPAN (TYPICAL) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSW92_10 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Voltage Transistor |
| MPSW92G | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW92RLRA | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW92RLRAG | 功能描述:兩極晶體管 - BJT 500mA 300V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSW92RLREG | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:One Watt High Voltage Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。