
2–673
Motorola Small–Signal Transistors, FETs and Diodes Device Data
RF Amplifier Transistor
PNP Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
–20
Vdc
Collector – Base Voltage
VCBO
–20
Vdc
Emitter – Base Voltage
VEBO
–3.0
Vdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
350
2.81
mW
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
357
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage
(IC = –1.0 mAdc, IB = 0)
V(BR)CEO
–20
—
Vdc
Collector – Base Breakdown Voltage
(IC = –10 mAdc, IE = 0)
V(BR)CBO
–20
—
Vdc
Emitter – Base Breakdown Voltage
(IE = –10 mAdc, IC = 0)
V(BR)EBO
–3.0
—
Vdc
Collector Cutoff Current
(VCB = –10 Vdc, IE = 0)
ICBO
—
–100
nAdc
Emitter Cutoff Current
(VEB = –2.0 Vdc, IC = 0)
IEBO
—
–100
nAdc
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPSH81
Motorola Preferred Device
CASE 29–04, STYLE 2
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
1
BASE
2
EMITTER