參數(shù)資料
型號(hào): MPSA93
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: 1500000 SYSTEM GATE 1.5 VOLT FPGA
中文描述: 500 mA, 200 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: CASE 29-11, TO-226, 3 PIN
文件頁(yè)數(shù): 2/2頁(yè)
文件大小: 37K
代理商: MPSA93
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
MPSA92, MPSA93
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
–I
C
= 10 mA, I
B
= 0
MPSA92
MPSA93
–V
(BR)CEO
–V
(BR)CEO
300
200
V
V
Collector-Base Breakdown Voltage
–I
C
= 100
μ
A, I
E
= 0
MPSA92
MPSA93
–V
(BR)CBO
–V
(BR)CBO
300
200
V
V
Emitter-Base Breakdown Voltage
–I
E
= 100
μ
A, I
C
= 0
–V
(BR)EBO
5
V
Collector-Base Cutoff Current
–V
CB
= 200 V, I
E
= 0
–V
CB
= 160 V, I
E
= 0
MPSA92
MPSA93
–I
CBO
–I
CBO
250
250
nA
nA
Emitter-Base Cutoff Current
–V
EB
= 3 V, I
C
= 0
–I
EBO
100
nA
DC Current Gain
–I
C
= 1 mA, –V
CE
= 10 V
–I
C
= 10 mA, –V
CE
= 10 V
–I
C
= 30 mA, –V
CE
= 10 V
h
FE
h
FE
h
FE
25
40
25
Collector-Emitter Saturation Voltage
–I
C
= 20 mA, –I
B
= 2 mA
–V
CEsat
500
mV
Base-Emitter Saturation Voltage
–I
C
= 20 mA, –I
B
= 2 mA
–V
BEsat
900
mV
Gain-Bandwidth Product
–I
C
= 10 mA, –V
CE
= 20 V, f = 100 MHz
f
T
50
MHz
Collector-Base Capacitance
–V
CB
= 20 V, I
E
= 0, f = 1 MHz
MPSA92
MPSA93
C
CBO
C
CBO
6
8
pF
pF
Thermal Resistance Junction to Ambient Air
R
thJA
200
1)
K/W
1)
Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.
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