參數(shù)資料
型號: MPSA56RL1
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AA, 3 PIN
文件頁數(shù): 23/36頁
文件大?。?/td> 385K
代理商: MPSA56RL1
NPN MPSA05 MPSA06 PNP MPSA55 MPSA56
2–621
Motorola Small–Signal Transistors, FETs and Diodes Device Data
Figure 2. MPSA05/06 Current–Gain —
Bandwidth Product
Figure 3. MPSA55/56 Current–Gain —
Bandwidth Product
Figure 4. MPSA05/06 Capacitance
Figure 5. MPSA55/56 Capacitance
Figure 6. MPSA05/06 Switching Time
Figure 7. MPSA55/56 Switching Time
100
200
2.0
IC, COLLECTOR CURRENT (mA)
300
200
100
70
50
30
IC, COLLECTOR CURRENT (mA)
–100
–200
–10
200
100
70
50
20
10
100
0.1
VR, REVERSE VOLTAGE (VOLTS)
80
60
40
20
10
8.0
VR, REVERSE VOLTAGE (VOLTS)
–1.0
–100
–0.1
100
70
50
30
20
10
–2.0
20
VCE = 2.0 V
TJ = 25°C
VCE = –2.0 V
TJ = 25°C
f T
,CURRENT–GAIN
BANDWIDTH
PRODUCT
(MHz)
C,
CAP
ACIT
ANCE
(pF)
3.0
5.0 7.0
10
20
30
50
70
–2.0 –3.0
–5.0 –7.0
–20
–30
–50 –70
30
f T
,CURRENT–GAIN
BANDWIDTH
PRODUCT
(MHz)
50
1.0
2.0
5.0
0.2
0.5
6.0
4.0
Cibo
Cobo
7.0
5.0
–0.2
–0.5
–5.0
–10
–20
–50
TJ = 25°C
Cibo
Cobo
20
10
IC, COLLECTOR CURRENT (mA)
200
100
50
20
10
IC, COLLECTOR CURRENT (mA)
–10
–5.0
500
200
100
50
20
10
–100
100
t,TIME
(ns)
t,TIME
(ns)
50
200
500
1.0 k
500
VCC = 40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
tr
–50
–200
–500
1.0 k
5.0 7.0
30
70
300
700
30
70
td @ VBE(off) = 0.5 V
300
700
70
30
–7.0
–300
–70
–20 –30
VCC = –40 V
IC/IB = 10
IB1 = IB2
TJ = 25°C
ts
tf
tr
td @ VBE(off) = –0.5 V
C,
CAP
ACIT
ANCE
(pF)
300
相關(guān)PDF資料
PDF描述
MPSA05ZL1 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA06ZL1 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA05RL1 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55RLRE 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA56RL 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
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MPSA56RLRAG 制造商:ON Semiconductor 功能描述:TRANSISTOR PNP -80V -0.5A TO-92 制造商:ON Semiconductor 功能描述:TRANSISTOR, PNP, -80V, -0.5A, TO-92
MPSA56RLRM 功能描述:兩極晶體管 - BJT 500mA 80V PNP RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
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