參數(shù)資料
型號: MPSA44RL
廠商: ON SEMICONDUCTOR
元件分類: 小信號晶體管
英文描述: 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC, TO-226AA, 3 PIN
文件頁數(shù): 1/35頁
文件大?。?/td> 344K
代理商: MPSA44RL
2–651
Motorola Small–Signal Transistors, FETs and Diodes Device Data
High Voltage Transistor
NPN Silicon
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector – Emitter Voltage
VCEO
400
Vdc
Collector – Base Voltage
VCBO
500
Vdc
Emitter – Base Voltage
VEBO
6.0
Vdc
Collector Current — Continuous
IC
300
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction to Ambient
RqJA
200
°C/W
Thermal Resistance, Junction to Case
RqJC
83.3
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(1)
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
400
Vdc
Collector – Emitter Breakdown Voltage
(IC = 100 Adc, VBE = 0)
V(BR)CES
500
Vdc
Collector – Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
V(BR)CBO
500
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
6.0
Vdc
Collector Cutoff Current
(VCB = 400 Vdc, IE = 0)
ICBO
0.1
Adc
Collector Cutoff Current
(VCE = 400 Vdc, VBE = 0)
ICES
500
nAdc
Emitter Cutoff Current
(VEB = 4.0 Vdc, IC = 0)
IEBO
0.1
Adc
1. Pulse Test: Pulse Width
v 300 ms, Duty Cycle v 2.0%.
Preferred devices are Motorola recommended choices for future use and best overall value.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPSA44
Motorola Preferred Device
CASE 29–04, STYLE 1
TO–92 (TO–226AA)
1
2
3
COLLECTOR
3
2
BASE
1
EMITTER
相關(guān)PDF資料
PDF描述
MPSA44RLRM 300 mA, 400 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA55RLRM 500 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA56RLRE 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA56RL1 500 mA, 80 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
MPSA05ZL1 500 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPSA44RL1 功能描述:兩極晶體管 - BJT 300mA 500V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSA44RL1G 功能描述:兩極晶體管 - BJT 300mA 500V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSA44RLRA 功能描述:兩極晶體管 - BJT 300mA 500V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSA44RLRAG 功能描述:兩極晶體管 - BJT 300mA 500V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPSA44U 制造商:SEMTECH_ELEC 制造商全稱:SEMTECH ELECTRONICS LTD. 功能描述:NPN Silicon Epitaxial Planar Transistor