參數(shù)資料
型號: MPSA42L34Z
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
文件頁數(shù): 7/14頁
文件大小: 881K
代理商: MPSA42L34Z
3
MPSA42
/
MMBT
A42
/
PZT
A42
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
300
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
300
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
6.0
V
ICBO
Collector-Cutoff Current
VCB = 200 V, IE = 0
0.1
A
IEBO
Emitter-Cutoff Current
VEB = 6.0 V, IC = 0
0.1
A
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.9
V
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5
Vtf=20 Xtf=150 Rb=10)
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
50
MHz
Ccb
Collector-Base Capacitance
VCB = 20 V, IE = 0, f = 1.0 MHz
3.0
pF
NPN High Voltage Amplifier
(continued)
Typical Characteristics
Collector- Emitter Saturation
Voltage vs Collect or Current
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I
- COLLECTOR CURRENT (mA)
V
-
C
O
L
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
C
ESA
T
C
β = 10
- 40 °C
25 °C
125 °C
DC Current Gain
vs Collector Current
0.1
1
10
100
20
40
60
80
100
120
140
I
- COLLECTOR CURRENT (mA)
h
-D
C
CU
RR
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V
= 5V
CE
125 °C
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