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參數(shù)資料
| 型號： | MPSA42D74Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 文件頁數(shù)： | 7/14頁 |
| 文件大?。?/td> | 881K |
| 代理商： | MPSA42D74Z |
3
MPSA42
/
MMBT
A42
/
PZT
A42
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Breakdown Voltage*
IC = 1.0 mA, IB = 0
300
V
V(BR)CBO
Collector-Base Breakdown Voltage
IC = 100
A, I
E = 0
300
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
6.0
V
ICBO
Collector-Cutoff Current
VCB = 200 V, IE = 0
0.1
A
IEBO
Emitter-Cutoff Current
VEB = 6.0 V, IC = 0
0.1
A
SMALL SIGNAL CHARACTERISTICS
ON CHARACTERISTICS*
hFE
DC Current Gain
IC = 1.0 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
25
40
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.5
V
VBE(sat)
Base-Emitter Saturation Voltage
IC = 20 mA, IB = 2.0 mA
0.9
V
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=34.9f Xti=3 Eg=1.11 Vaf=100 Bf=2.65K Ne=1.708 Ise=16.32p Ikf=23.79m Xtb=1.5 Br=9.769 Nc=2 Isc=0
Ikr=0 Rc=7 Cjc=14.23p Mjc=.5489 Vjc=.75 Fc=.5 Cje=49.62p Mje=.4136 Vje=.75 Tr=934.3p Tf=1.69n Itf=5
Vtf=20 Xtf=150 Rb=10)
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
f = 100 MHz
50
MHz
Ccb
Collector-Base Capacitance
VCB = 20 V, IE = 0, f = 1.0 MHz
3.0
pF
NPN High Voltage Amplifier
(continued)
Typical Characteristics
Collector- Emitter Saturation
Voltage vs Collect or Current
0.1
1
10
100
0.05
0.1
0.15
0.2
0.25
0.3
I
- COLLECTOR CURRENT (mA)
V
-
C
O
L
E
C
T
O
R
-E
M
IT
T
E
R
V
O
L
T
A
G
E
(V
)
C
ESA
T
C
β = 10
- 40 °C
25 °C
125 °C
DC Current Gain
vs Collector Current
0.1
1
10
100
20
40
60
80
100
120
140
I
- COLLECTOR CURRENT (mA)
h
-D
C
CU
RR
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V
= 5V
CE
125 °C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA42DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP |
| MPSA42DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP |
| MPSA42DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 300V V(BR)CEO | CHIP |
| MPSA42G | 功能描述:兩極晶體管 - BJT 500mA 300V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42G | 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR NPN 300V TO-92 制造商:ON Semiconductor 功能描述:BIPOLAR TRANSISTOR, NPN, 300V TO-92 |
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