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參數(shù)資料
| 型號： | MPSA42 |
| 廠商： | GE Security, Inc. |
| 英文描述： | Small Signal Transistors(NPN)(小信號晶體管（NPN）) |
| 中文描述： | 小信號晶體管（NPN）的（小信號晶體管（NPN）的） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 38K |
| 代理商： | MPSA42 |
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C
ambient temperature unless otherwise specified
Symbol
Min.
Typ.
Max.
Unit
Collector-Emitter Breakdown Voltage
I
C
= 10 mA, I
B
= 0
MPSA42
MPSA43
V
(BR)CEO
V
(BR)CEO
300
200
–
–
–
–
V
V
Collector-Base Breakdown Voltage
I
C
= 100
μ
A, I
E
= 0
MPSA42
MPSA43
V
(BR)CBO
V
(BR)CBO
300
200
–
–
–
–
V
V
Emitter-Base Breakdown Voltage
I
E
= 100
μ
A, I
C
= 0
V
(BR)EBO
6
–
–
V
Collector-Base Cutoff Current
V
CB
= 200 V, I
E
= 0
V
CB
= 160 V, I
E
= 0
MPSA42
MPSA43
I
CBO
I
CBO
–
–
–
–
100
100
nA
nA
Emitter-Base Cutoff Current
V
EB
= 6 V, I
C
= 0
V
EB
= 4 V, I
C
= 0
MPSA42
MPSA43
I
EBO
I
EBO
–
–
–
–
100
100
nA
nA
DC Current Gain
I
C
= 1 mA, V
CE
= 10 V
I
C
= 10 mA, V
CE
= 10 V
I
C
= 30 mA, V
CE
= 10 V
h
FE
h
FE
h
FE
25
40
40
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
I
C
= 20 mA, I
B
= 2 mA
V
CEsat
–
–
500
mV
Base-Emitter Saturation Voltage
I
C
= 20 mA, I
B
= 2 mA
V
BEsat
–
–
900
mV
Gain-Bandwidth Product
I
E
= 10 mA, V
CE
= 20 V, f = 100 MHz
f
T
50
–
–
MHz
Collector-Base Capacitance
V
CB
= 20 V, I
E
= 0, f = 1 MHz
MPSA42
MPSA43
C
CBO
C
CBO
–
–
–
–
3
4
pF
pF
Thermal Resistance Junction to Ambient Air
R
thJA
–
–
200
1)
K/W
1)
Valid provided that lead are kept at ambient temperature at a distance of 2 mm from case.
MPSA42, MPSA43
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MPS-A42 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:NPN SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS |
| MPSA42 AMO | 功能描述:兩極晶體管 - BJT TRANS HV AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42 T/R | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42,116 | 功能描述:兩極晶體管 - BJT TRANS HV TAPE RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA42,126 | 功能描述:兩極晶體管 - BJT TRANS HV AMMO RADIAL RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
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