參數(shù)資料
型號: MPSA27RLRMG
廠商: ON SEMICONDUCTOR
元件分類: 功率晶體管
英文描述: Darlington Transistor NPN Silicon
中文描述: 500 mA, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: TO-226AA, 3 PIN
文件頁數(shù): 2/4頁
文件大小: 59K
代理商: MPSA27RLRMG
MPSA27
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage
(I
C
= 100 Adc, V
BE
= 0)
V
(BR)CES
60
Vdc
CollectorBase Breakdown Voltage
(I
C
= 100 Adc, I
E
= 0)
V
(BR)CBO
60
Vdc
Collector Cutoff Current
(V
CB
= 30 V, I
E
= 0)
(V
CB
= 40 V, I
E
= 0)
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector Cutoff Current
(V
CE
= 30 V, V
BE
= 0)
(V
CE
= 40 V, V
BE
= 0)
(V
CE
= 50 V, V
BE
= 0)
I
CES
500
nAdc
Emitter Cutoff Current
(V
EB
= 10 Vdc)
I
EBO
100
nAdc
ON CHARACTERISTICS
(Note 1)
DC Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V)
(I
C
= 100 mA, V
CE
= 5.0 V)
h
FE
10,000
10,000
CollectorEmitter Saturation Voltage
(I
C
= 100 mA, I
B
= 0.1 mAdc)
V
CE(sat)
1.5
Vdc
BaseEmitter On Voltage
(I
C
= 100 mA, V
CE
= 5.0 Vdc)
V
BE(on)
2.0
Vdc
SMALLSIGNAL CHARACTERISTICS
Small Signal Current Gain
(I
C
= 10 mA, V
CE
= 5.0 V, f = 100 MHz)
1. Pulse Test: Pulse Width
300 s, Duty Cycle
2.0%.
h
fe
1.25
2.4
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