
MPSA13 and MPSA14
Vishay Semiconductors
formerly General Semiconductor
Document Number 88234
www.vishay.com
10-May-02
1
New Product
Darlington Transistors (NPN)
Collector
Base
Emitter
Features
NPN Silicon Darlington Transistor for
switching and amplifier applications.
High collector current
High current gain
These transistors are also available in the
SOT-23 case with the type designation
MMBTA13 & MMBTA14
Mechanical Data
Case: TO-92 Plastic Package
Weight: Approx. 0.18g
Packaging Codes/Options:
E6/Bulk – 5K per container, 20K/box
E7/4K per Ammo mag., 20K/box
Maximum Ratings and Thermal Characteristics (TC = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base Voltage
VCBO
30
V
Collector-Emitter Voltage
VCES
30
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
500
mA
Power Dissipation at TA = 25°C
625
mW
at TC = 25°C
Ptot
1.5
W
Thermal Resistance Junction to Ambient Air
R
ΘJA
200(1)
°C/W
Thermal Resistance Junction to Case
R
ΘJC
83.3
°C/W
Maximum Junction Temperature
Tj
150
°C
Storage Temperature Range
TS
–55 to +150
°C
Note: (1) Valid provided that leads are kept at ambient temperature
0.181 (4.6)
m
in
.0.492
(12.5
)
0.1
81
(4
.6)
0.142 (3.6)
0.098 (2.5)
max.
0.022 (0.55)
Bottom
View
TO-226AA (TO-92)
Dimensions in inches
and (millimeters)