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參數資料
| 型號： | MPSA13 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Mini size of Discrete semiconductor elements |
| 中文描述： | 迷你型離散半導體元件 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 433K |
| 代理商： | MPSA13 |
MPSA13
MPSA14
NPN Silicon
Darlington Transistor
TO-92
DIMENSIONS
DIM
A
B
C
D
E
G
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MAX
.185
.185
---
.020
.145
.105
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
Features
Capable of 1.5Watts of Power Dissipation.
Collector-current 500mA
Collector-base Voltage 30V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Maximum Ratings
Symbol
V
CES
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current Continuous
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
O
C
P
D
Total Device Dissipation @T
A
=25
O
C
Derate above 25
C
T
J
Junction Temperature
T
STG
Storage Temperature
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
OFF CHARACTERISTICS
V
(BR)CES
Collector-Emitter Breakdown Voltage
(I
C
=100uAdc, I
B
=0)
I
CBO
Collector Cutoff Current
(V
CB
=30Vdc, I
E
=0)
I
EBO
Emitter Cutoff Current
(V
EB
=10Vdc, I
C
=0)
ONCHARACTERISTICS
(1)
h
FE(1)
DC Current Gain
(I
C
=10mAdc, V
CE
=5.0Vdc) MPSA13
Rating
Rating
30
30
10
500
625
5.0
1.5
12
-55 to +150
-55 to +150
Unit
V
V
V
mA
mW
mW/
O
C
W
mW/
O
C
O
C
O
C
Min
Max
Units
30
Vdc
100
nAdc
100
nAdc
MPSA14
5000
10000
h
FE(2)
DC Current Gain
(I
C
=100mAdc, V
CE
=5.0Vdc) MPSA 13
MPSA14
10000
20000
V
CE(sat)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=0.1mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, V
CE
=5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
f
T
Current-Gain – Bandwidth Product
(2)
(I
C
=10mAdc, V
CE
=5.0Vdc, f=100MHz)
1.
Pulse Test: Pulse Width<300us, Duty Cycle<2.0%
2.
f
T
=|h
fe
| x f
test
1.5
Vdc
V
BE(on)
2.0
Vdc
125
MHz
A
E
B
C
D
G
Pin Configuration
Bottom View
C
B
E
omp
onents
21201 Itasca Street Chatsworth
!
"#
"#
$ %
!
M C C
www.
mc c semi
.c om
相關PDF資料 |
PDF描述 |
|---|---|
| MPSA14 | Mini size of Discrete semiconductor elements |
| MPSA13 | Darlington Transistors(NPN Silicon) |
| MPSA14 | 200000 SYSTEM GATE 1.8 VOLT FPGA - NOT RECOMMENDED for NEW DESIGN |
| MPSA13 | Darlington Transistors |
| MPSA14 | 200000 SYSTEM GATE 1.8V FPGA - NOT RECOMMENDED for NEW DESIGN |
相關代理商/技術參數 |
參數描述 |
|---|---|
| MPS-A13 | 制造商:MICRO-ELECTRONICS 制造商全稱:Micro Electronics 功能描述:SILICON PLANAR EPITAXIAL DARLINGTON RANSISTORS |
| MPSA13 D75Z | 制造商:Fairchild Semiconductor Corporation 功能描述:Trans Darlington NPN 30V 1.2A 3-Pin TO-92 Ammo |
| MPSA13/KSP13 | 功能描述:達林頓晶體管 TO92,NPN,0.5A,30V Darlington RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發(fā)射極最大電壓 VCEO:50 V 發(fā)射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel |
| MPSA13/KSP13-T | 功能描述:兩極晶體管 - BJT NPN 0.5A 30V Darling RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA13_05 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:NPN Darlington Transistor |
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