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參數(shù)資料
| 型號： | MPSA06D75Z |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 500 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 10/17頁 |
| 文件大?。?/td> | 778K |
| 代理商： | MPSA06D75Z |
3
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol
Parameter
Test Conditions
Min
Max
Units
V(BR)CEO
Collector-Emitter Sustaining Voltage*
IC = 1.0 mA, IB = 0
80
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 100
A, I
C = 0
4.0
V
ICEO
Collector-Cutoff Current
VCE = 60 V, IB = 0
0.1
A
ICBO
Collector-Cutoff Current
VCB = 80 V, IE = 0
0.1
A
ON CHARACTERISTICS
hFE
DC Current Gain
IC = 10 mA, VCE = 1.0 V
IC = 100 mA, VCE = 1.0 V
100
VCE(sat)
Collector-Emitter Saturation Voltage
IC = 100 mA, IB = 10 mA
0.25
V
VBE(on)
Base-Emitter On Voltage
IC = 100 mA, VCE = 1.0 V
1.2
V
SMALL SIGNAL CHARACTERISTICS
*Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2.0%
Spice Model
NPN (Is=8.324f Xti=3 Eg=1.11 Vaf=100 Bf=12.16K Ne=1.368 Ise=73.27f Ikf=.1096 Xtb=1.5 Br=11.1 Nc=2 Isc=0
Ikr=0 Rc=.25 Cjc=18.36p Mjc=.3843 Vjc=.75 Fc=.5 Cje=55.61p Mje=.3834 Vje=.75 Tr=72.15n Tf=516.1p Itf=.5
Vtf=4 Xtf=6 Rb=10)
Typical Characteristics
fT
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 2.0 V,
f = 100 MHz
100
MHz
Typical Pulsed Current Gain
vs Collector Current
0.001
0.01
0.1
50
100
150
200
I
- COLLECTOR CURRENT (A)
h
-
T
Y
P
IC
A
L
PU
L
SED
C
U
R
E
N
T
G
A
IN
FE
- 40 °C
25 °C
C
V
= 1V
CE
125 °C
Collector-Emitt er Saturation
Voltage vs Collect or Curre nt
0.1
1
10
100
1000
0
0.1
0.2
0.3
0.4
0.5
I - COLLECTOR CURRE NT (mA)
V
-C
O
L
EC
T
O
R
EM
IT
T
E
R
V
O
L
TA
G
E
(
V
)
C
CE
S
A
T
β = 10
- 40 °C
25 °C
125 °C
MPSA06
/
MMBT
A06
/
PZT
A06
NPN General Purpose Amplifier
(continued)
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| MPSA06DA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | CHIP |
| MPSA06DB | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | CHIP |
| MPSA06DC | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 80V V(BR)CEO | CHIP |
| MPSA06G | 功能描述:兩極晶體管 - BJT 500mA 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| MPSA06G-T92-B | 制造商:UTC-IC 制造商全稱:UTC-IC 功能描述:NPN TRANSISTOR |
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