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參數(shù)資料
| 型號(hào)： | MPS712 |
| 廠商： | CENTRAL SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | PNP DARLINGTON TRANSISTOR |
| 中文描述： | 800 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 |
| 封裝： | TO-92, 3 PIN |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 68K |
| 代理商： | MPS712 |
(SEE REVERSE SIDE)
R0
MPS712
PNP DARLINGTON TRANSISTOR
TO-92 CASE
DATA SHEET
DESCRIPTION
The CENTRAL SEMICONDUCTOR MPS712 is a silicon PNP Darlington Transistor, manufactured by the
epitaxial planar process, designed for applications requiring extremely high gain.
MAXIMUM RATINGS (TA=25°C)
SYMBOL
UNITS
Collector-Base Voltage
VCBO
80
V
Collector-Emitter Voltage
VCEO
60
V
Emitter-Base Voltage
VEBO
10
V
Collector Current
IC
800
mA
Peak Collector Current
ICM
2.0
A
Power Dissipation
PD
1.0
W
Operating and Storage
Junction Temperature
TJ,Tstg
-65 to +150
°C
Thermal Resistance
ΘJA
125
°C/W
ELECTRICAL CHARACTERISTICS (TA=25°C)
SYMBOL
TEST CONDITIONS
MIN
MAX
UNITS
ICBO
VCB=60V
100
nA
IEBO
VEB=8.0V
100
nA
BVCBO
IC=10A
80
V
BVCEO
IC=10mA
60
V
BVEBO
IE=10A
10
V
VCE(SAT)
IC=800mA, IB=8.0mA
1.25
V
VBE(ON)
VCE=5.0V, IC=800mA
1.80
V
hFE
VCE=5.0V, IC=100mA
5K
hFE
VCE=5.0V, IC=500mA
10K
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