參數(shù)資料
      

      


      


      
型號(hào)：
MPS651RL1

      

      
廠商：
ON SEMICONDUCTOR

      

      
元件分類：
小信號(hào)晶體管

      

      
英文描述：
2000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

      

      
封裝：
PLASTIC, TO-226AA, 3 PIN

      

      
文件頁(yè)數(shù)：
1/34頁(yè)

      

      
文件大小：
342K

      

      
代理商：
MPS651RL1


      

      

      

	
      
    
    

    
      
	
      2–529
      Motorola Small–Signal Transistors, FETs and Diodes Device Data
      Amplifier Transistors
      MAXIMUM RATINGS
      Rating
      Symbol
      MPS650
      MPS750
      MPS651
      MPS751
      Unit
      Collector – Emitter Voltage
      VCE
      40
      60
      Vdc
      Collector – Base Voltage
      VCB
      60
      80
      Vdc
      Emitter – Base Voltage
      VEB
      5.0
      Vdc
      Collector Current — Continuous
      IC
      2.0
      Adc
      Total Power Dissipation @ TA = 25°C
      Derate above 25
      °C
      PD
      625
      5.0
      mW
      mW/
      °C
      Total Power Dissipation @ TC = 25°C
      Derate above 25
      °C
      PD
      1.5
      12
      Watt
      mW/
      °C
      Operating and Storage Junction
      Temperature Range
      TJ, Tstg
      – 55 to +150
      °C
      THERMAL CHARACTERISTICS
      Characteristic
      Symbol
      Max
      Unit
      Thermal Resistance, Junction to Ambient
      RqJA
      200
      °C/W
      Thermal Resistance, Junction to Case
      RqJC
      83.3
      °C/W
      ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
      Characteristic
      Symbol
      Min
      Max
      Unit
      OFF CHARACTERISTICS
      Collector – Emitter Breakdown Voltage(1)
      (IC = 10 mAdc, IB = 0)
      MPS650, MPS750
      MPS651, MPS751
      V(BR)CEO
      40
      60
      —
      Vdc
      Collector – Base Breakdown Voltage
      (IC = 100 Adc, IE = 0 )
      MPS650, MPS750
      MPS651, MPS751
      V(BR)CBO
      60
      80
      —
      Vdc
      Emitter – Base Breakdown Voltage
      (IC = 0, IE = 10 Adc)
      V(BR)EBO
      5.0
      —
      Vdc
      Collector Cutoff Current
      (VCB = 60 Vdc, IE = 0)
      MPS650, MPS750
      (VCB = 80 Vdc, IE = 0)
      MPS651, MPS751
      ICBO
      —
      0.1
      Adc
      Emitter Cutoff Current
      (VEB = 4.0 V, IC = 0)
      IEBO
      —
      0.1
      Adc
      1. Pulse Test: Pulse Width
      ≤ 300 ms, Duty Cycle = 2.0%.
      Preferred devices are Motorola recommended choices for future use and best overall value.
      MOTOROLA
      SEMICONDUCTOR TECHNICAL DATA
      NPN
      MPS650
      MPS651
      PNP
      MPS750
      MPS751
      *Motorola Preferred Devices
      *
      CASE 29–04, STYLE 1
      TO–92 (TO–226AA)
      1
      2
      3
      *
      Voltage and current are
      negative for PNP transistors
      COLLECTOR
      3
      2
      BASE
      1
      EMITTER
      COLLECTOR
      3
      2
      BASE
      1
      EMITTER
      NPN
      PNP
      
    
      
    
    
      


      


      

      相關(guān)PDF資料
      		

      PDF描述
      		

      
      

      
MPS750RL1
2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

      

      
MPS751RLRE
2000 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

      

      
MPS650RLRM
2000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

      

      
MPS750RLRM
2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

      

      
MPS750RL
2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

      

      

      

      


      


      

      相關(guān)代理商/技術(shù)參數(shù)
      		

      參數(shù)描述
      		

      
      

      
MPS651RLRA
功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2

      

      
MPS651RLRAG
功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2

      

      
MPS651RLRB
 制造商:Rochester Electronics LLC 功能描述:- Bulk

      

      
MPS651RLRBG
 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Amplifier Transistors

      

      
MPS651RLRM
功能描述:兩極晶體管 - BJT 2A 80V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2

      

      
    
    
    
	
      	
    
    
     
     
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