參數(shù)資料
型號(hào)： MPS3563G
廠商： ON SEMICONDUCTOR
元件分類： 功率晶體管
英文描述： Amplifier Transistors NPN Silicon
中文描述： UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-92
封裝： LEAD FREE, CASE 29-11, TO-226, 3 PIN
文件頁(yè)數(shù)： 2/3頁(yè)
文件大?。?/td> 53K
代理商： MPS3563G
MPS918, MPS3563
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage (Note 2)
(I
C
= 3.0 mAdc, I
B
= 0)
MPS918
MPS3563
V
(BR)CEO
15
12
Vdc
CollectorBase Breakdown Voltage
(I
C
= 1.0 Adc, I
E
= 0)
(I
C
= 100 Adc, I
E
= 0)
MPS918
MPS3563
V
(BR)CBO
30
30
Vdc
EmitterBase Breakdown Voltage
(I
E
= 10 Adc, I
C
= 0)
MPS918
MPS3563
V
(BR)EBO
3.0
2.0
Vdc
Collector Cutoff Current
(V
CB
= 15 Vdc, I
E
= 0)
MPS918
MPS3563
I
CBO
10
50
nAdc
ON CHARACTERISTICS
DC Current Gain (Note 2)
(I
C
= 3.0 mAdc, V
CE
= 1.0 Vdc)
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc)
MPS918
MPS3563
h
FE
20
20
200
CollectorEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MPS918
V
CE(sat)
0.4
Vdc
BaseEmitter Saturation Voltage
(I
C
= 10 mAdc, I
B
= 1.0 mAdc)
MPS918
V
BE(sat)
1.0
Vdc
SMALLSIGNAL CHARACTERISTICS
CurrentGain Bandwidth Product (Note 2)
(I
C
= 4.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc, f = 100 MHz)
MPS918
MPS3563
f
T
600
600
1500
MHz
Output Capacitance
(V
CB
= 0 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
(V
CB
= 10 Vdc, I
E
= 0, f = 1.0 MHz)
MPS918
MPS918
MPS3563
C
obo
3.0
1.7
1.7
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
MPS918
C
ibo
2.0
pF
SmallSignal Current Gain
(I
C
= 8.0 mAdc, V
CE
= 10 Vdc, f = 1.0 kHz)
MPS3563
h
fe
20
250
Noise Figure
(I
C
= 1.0 mAdc, V
CE
= 6.0 Vdc, R
S
= 400 k , f = 60 MHz)
MPS918
NF
6.0
dB
FUNCTIONAL TEST
CommonEmitter Amplifier Power Gain
(I
C
= 6.0 mAdc, V
CB
= 12 Vdc, f = 200 MHz)
(I
C
= 8.0 mAdc, V
= 10 Vdc, f = 200 MHz)
(G
fd
+ G
re
20 dB)
MPS918
MPS3563
G
pe
15
14
dB
Power Output
(I
C
= 8.0 mAdc, V
CB
= 15 Vdc, f = 500 MHz)
MPS918
P
out
30
mW
Oscillator Collector Efficiency
(I
C
= 8.0 mAdc, V
CB
= 15 Vdc, P
out
= 30 mW, f = 500 MHz)
2. Pulse Test: Pulse Width
300 s; Duty Cycle
MPS918
η
25
%
1.0%.
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PDF描述
MPS3563RLRA Amplifier Transistors NPN Silicon
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MPS3563RLRA 功能描述:兩極晶體管 - BJT 50mA 12V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS3563RLRAG 功能描述:兩極晶體管 - BJT 50mA 12V NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2
MPS3565C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN TRANSISTOR
MPS3566 制造商:FLORIDA MISC. 功能描述:
MPS3566C 制造商:未知廠家 制造商全稱:未知廠家 功能描述:NPN TRANSISTOR
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