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| 型號(hào)： | MPQ7093 |
| 廠(chǎng)商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | 0.5 A, 250 V, 4 CHANNEL, PNP, Si, POWER TRANSISTOR, TO-116 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁(yè)數(shù)： | 12/33頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | MPQ7093 |
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MPQ7091 MPQ7093
2–524
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Max
Unit
ON CHARACTERISTICS
DC Current Gain
(IC = –1.0 mAdc, VCE = –10 Vdc)
(IC = –10 mAdc, VCE = –10 Vdc)
(IC = –30 mAdc, VCE = –10 Vdc)
hFE
25
35
25
40
55
50
—
Collector – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VCE(sat)
—
–0.3
–0.5
Vdc
Base – Emitter Saturation Voltage
(IC = –20 mAdc, IB = –2.0 mAdc)
VBE(sat)
—
–0.7
–0.9
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)
fT
50
70
—
MHz
Output Capacitance
(VCB = –20 Vdc, IE = 0, f =1.0 MHz)
Cobo
—
3.0
5.0
pF
Input Capacitance
(VEB = –3.0 Vdc, IC = 0, f = 1.0 MHz)
Cibo
—
60
75
pF
DC CHARACTERISTICS
Figure 1. DC Current Gain
Figure 2. “ON” Voltages
Figure 3. Temperature Coefficients
IC, COLLECTOR CURRENT (mA)
V
,VOL
TAGE
(VOL
TS)
q
,TEMPERA
TURE
COEFFICIENT
(mV/
C)
V
°
h
FE
,DC
CURRENT
GAIN
200
20
–100
–1.0
–2.0
–5.0
–10
–20
–50
100
30
50
70
TJ = 125°C
25
°C
–55
°C
–3.0
–30
VCE = –10 V
–100
–1.0
–0.8
–0.6
–0.4
–0.2
0
–1.0
–2.0
–5.0
–10
–20
–50
TJ = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = –10 V
–3.0
–7.0
–30
–70
–1.2
–1.4
–100
2.0
1.0
0
–1.0
–2.0
–2.5
–1.0
–2.0
–5.0
–10
–20
–50
25
°C TO 125°C
–55
°C TO 25°C
–55
°C TO 125°C
qVB FOR VBE
qVC FOR VCE(sat)
–3.0
–7.0
–30
–70
–1.5
2.5
1.5
–0.5
0.5
IC/IB = 10
–7.0
–70
5.0
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