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參數(shù)資料
| 型號： | MPQ6600A1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 50 mA, 45 V, 4 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, TO-116 |
| 封裝： | PLASTIC, DIP-14 |
| 文件頁數(shù)： | 12/34頁 |
| 文件大?。?/td> | 330K |
| 代理商： | MPQ6600A1 |
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MPQ6100A MPQ6600A1
2–472
Motorola Small–Signal Transistors, FETs and Diodes Device Data
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage(2)
(IC = 10 mAdc, IB = 0)
MPQ6100A, 6600A1
V(BR)CEO
45
—
Vdc
Collector – Base Breakdown Voltage
(IC = 10 mAdc, IE = 0)
V(BR)CBO
60
—
Vdc
Emitter – Base Breakdown Voltage
(IE = 10 mAdc, IC = 0)
V(BR)EBO
5.0
—
Vdc
Collector Cutoff Current
(VCB = 50 Vdc, IE = 0)
ICBO
—
10
nAdc
ON CHARACTERISTICS(2)
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
MPQ6100A, 6600A1
(IC = 500 Adc, VCE = 5.0 Vdc)
MPQ6100A, 6600A1
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MPQ6100A, 6600A1
(IC = 10 mAdc, VCE = 5.0 Vdc)
MPQ6100A, 6600A1
hFE
100
150
125
—
Collector – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 100 Adc)
VCE(sat)
—
0.25
Vdc
Base – Emitter Saturation Voltage
(IC = 1.0 mAdc, IB = 100 Adc)
VBE(sat)
—
0.8
Vdc
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product
(IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz)
fT
50
—
MHz
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f =1.0 MHz)
PNP
NPN
Cobo
—
1.2
1.8
4.0
pF
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
PNP
NPN
Cibo
—
8.0
pF
Noise Figure
(IC = 100 Adc, VCE = 5.0 Vdc, RS = 10 k,
f = 1.0 kHz, BW = 10 kHz)
NF
—
4.0
—
dB
MATCHING CHARACTERISTICS (MPQ6600A1 ONLY)
DC Current Gain Ratio
(IC = 100 Adc, VCE = 5.0 Vdc)
hFE1/hFE2
0.8
—
1.0
—
Base–Emitter Voltage Differential
(IC = 100 Adc, VCE = 5.0 Vdc)
|VBE1–VBE2|
—
20
mVdc
2. Pulse Test: Pulse Width
v 300 ms; Duty Cycle v 2.0%.
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相關(guān)代理商/技術(shù)參數(shù) |
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| MPQ6700 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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| MPQ7042 | 制造商:Motorola Inc 功能描述: |
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