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參數(shù)資料
| 型號： | MPN3700 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 參考電壓二極管 |
| 英文描述： | High Voltage Silicon Pin Diodes |
| 中文描述： | 200 V, SILICON, PIN DIODE, TO-92 |
| 封裝： | PLASTIC, CASE 182-06, TO-226AC, 2 PIN |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 53K |
| 代理商： | MPN3700 |
High Voltage Silicon Pin Diodes
These devices are designed primarily for VHF band switching
applications but are also suitable for use in general–purpose switching
circuits. They are supplied in a cost–effective plastic package for
economical, high–volume consumer and industrial requirements.
They are also available in surface mount.
Long Reverse Recovery Time trr = 300 ns (Typ)
Rugged PIN Structure Coupled with Wirebond Construction for
Optimum Reliability
Low Series Resistance @ 100 MHz – RS = 0.7 Ohms (Typ) @
IF = 10 mAdc
Reverse Breakdown Voltage = 200 V (Min)
MAXIMUM RATINGS
Rating
Symbol
MPN3700
MMBV3700LT1
Unit
Reverse Voltage
VR
PD
200
Vdc
Total Power Dissipation
@ TA = 25
°
C
Derate above 25
°
C
280
2.8
200
2.0
mW
mW/
°
C
Junction Temperature
TJ
Tstg
+125
°
C
Storage Temperature Range
–55 to +150
°
C
DEVICE MARKING
MMBV3700LT1 = 4R
ELECTRICAL CHARACTERISTICS
(TA = 25
°
C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Reverse Breakdown Voltage
(IR = 10
μ
Adc)
V(BR)R
200
–
–
Vdc
Diode Capacitance
(VR = 20 Vdc, f = 1.0 MHz)
CT
–
–
1.0
pF
Series Resistance (Figure 5)
(IF = 10 mAdc)
RS
–
0.7
1.0
Reverse Leakage Current
(VR = 150 Vdc)
IR
–
–
0.1
μ
Adc
Reverse Recovery Time
(IF = IR = 10 mAdc)
trr
–
300
–
ns
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
November, 2001 – Rev. 2
1
Publication Order Number:
MMBV3700LT1D
MMBV3700LT1
MPN3700
1
2
3
CASE 318–08, STYLE 8
SOT–23 (TO–236AB)
1
2
CASE 182–06, STYLE 1
TO–92 (TO–226AC)
3
Cathode
1
Anode
2
Cathode
1
Anode
SOT–23
TO–92
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