參數(shù)資料
型號(hào)： MPLAD15KP130CAE3TR
廠商： MICROSEMI CORP-IRELAND
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE
封裝： ROHS COMPLIANT, PLASTIC PACKAGE-1
文件頁數(shù)： 1/4頁
文件大?。?/td> 290K
代理商： MPLAD15KP130CAE3TR
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland.
6 Lake Street, Lawrence, MA 01841
Tel: +353 (0) 65 6840044, Fax: +353 (0) 65 6822298
Tel: 1-800-446-1158 / (978) 794-1666, Fax: (978) 6890803
Website: http://www.microsemi.com
RF01004 Rev A, June 2010
High Reliability Product Group
Page 1 of 4
DEVICES
MPLAD15KP7.0A thru MPLAD15KP200CA, e3
LEVELS
M, MA, MX, MXL
FEATURES
High reliability controlled devices with wafer fabrication and assembly lot traceability
100 % surge tested devices
Low profile surface mount
Optional up screening available by replacing the M prefix with MA, MX or MXL. These prefixes specify
various screening and conformance inspection options based on MIL-PRF-19500. Refer to MicroNote
129 for more details on the screening options
Suppresses transients up to 15,000 W @ 10/1000 s (see Figure 1)
Moisture classification is Level 1 with no dry pack required per IPC/JEDEC J-STD-020B
RoHS compliant devices available by adding an “e3” suffix
3σ lot norm screening performed on Standby Current I
D
APPLICATIONS / BENEFITS
Protection from switching transients and induced RF
Protection from ESD, and EFT per IEC 61000-4-2 and IEC 61000-4-4
Secondary lightning protection per IEC 61000-4-5 with 42 Ohms source impedance:
o
Class 1,2,3,4,5: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 12 Ohms source impedance:
o
Class 1,2,3,4: MPLAD15KP7.0A to 200CA
Secondary lightning protection per IEC 61000-4-5 with 2 Ohms source impedance:
o
Class 2,3: MPLAD15KP7.0A to 200CA
o
Class 4: MPLAD15KP5.0 to 54CA
Pin injection protection per RTCA/DO-160D for Waveform 4 (6.4/69 s):
o
Level 4: MPLAD15KP7.0A to 200CA
o
Level 5: MPLAD15KP7.0A to 100CA
Pin injection protection per RTCA/DO-160D for Waveform 5A (40/120 s):
o
Level 4: MPLAD15KP7.0A to 28CA
MAXIMUM RATINGS
Peak Pulse Power dissipation at 25 °C:
15,000 watts at 10/1000 μs (also see Figures 1 and 2) with
impulse repetition rate (duty factor) of 0.05% or less
tclamping (0 volts to VBR min.): < 100 ps theoretical for unidirectional and < 5 ns for bidirectional
Operating and Storage temperature: -55 °C to +150 °C
Thermal resistance: 0.2 °C/W junction to case or 50 °C/W junction to ambient when mounted on FR4 PC
board with recommended mounting pad (see page 2)
Steady-State Power dissipation: 50 watts at TC = 100 °C with good heat sink, or 2.5 watts at TA = 25 °C
if mounted on FR4 PC board as described for thermal resistance
Forward Surge Voltage: 3.5 V maximum @ 500 Amps 8.3 ms half-sine wave (unidirectional devices only)
Solder temperatures: 260 °C for 10 s (maximum)
SURFACE MOUNT 15,000 W
Transient Voltage Suppressor
- High Reliability controlled devices
- Unidirectional (A) and Bidirectional (CA) construction
- Selections for 7.0 to 200 V standoff voltages (VWM)
- Fast response
相關(guān)PDF資料
PDF描述
MPLAD15KP15CAE3TR 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE
MPLAD15KP170CA 15000 W, BIDIRECTIONAL, SILICON, TVS DIODE
MPLAD15KP20ATR 15000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MRT100KP160AE3 100000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
MRT100KP280CA 100000 W, BIDIRECTIONAL, SILICON, TVS DIODE
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