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參數(shù)資料
| 型號： | MPF930 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 35 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-226AE |
| 封裝： | CASE 29-05, TO-92, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 129K |
| 代理商： | MPF930 |
Semiconductor Components Industries, LLC, 2006
August, 2006 Rev. 4
1
Publication Order Number:
MPF930/D
MPF930
TMOS Switching
NChannel — Enhancement
MAXIMUM RATINGS
Rating
Symbol MPF930 MPF960 MPF990
Unit
DrainSource Voltage
VDS
35
60
90
Vdc
DrainGate Voltage
VDG
35
60
90
Vdc
GateSource Voltage
— Continuous
— Nonrepetitive
(tp ≤ 50 μs)
VGS
VGSM
± 20
± 40
Vdc
Vpk
Drain Current
Continuous(1)
Pulsed(2)
ID
IDM
2.0
3.0
Adc
Total Device Dissipation
@ TA = 25°C
Derate above 25°C
PD
1.0
8.0
W
mW/°C
Operating and Storage
Junction
Temperature Range
TJ, Tstg
55 to 150
°C
Thermal Resistance
θJA
125
°C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
DrainSource Breakdown Voltage
(VGS = 0, ID = 10 μAdc)
MPF930
MPF960
MPF990
V(BR)DSX
35
60
90
—
Vdc
Gate Reverse Current (VGS = 15 Vdc, VDS = 0)
IGSS
—
50
nAdc
ON CHARACTERISTICS(2)
ZeroGateVoltage Drain Current
(VDS = Maximum Rating, VGS = 0)
IDSS
—
10
μAdc
Gate Threshold Voltage
(ID = 1.0 mAdc, VDS = VGS)
VGS(Th)
1.0
—
3.5
Vdc
DrainSource OnVoltage (VGS = 10 Vdc)
(ID = 0.5 Adc)
MPF930
MPF960
MPF990
(ID = 1.0 Adc)
MPF930
MPF960
MPF990
(ID = 2.0 Adc)
MPF930
MPF960
MPF990
VDS(on)
—
0.4
0.6
0.9
1.2
2.2
2.8
0.7
0.8
1.2
1.4
1.7
2.4
3.0
3.5
4.8
Vdc
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width v 300 μs, Duty Cycle v 2.0%.
http://onsemi.com
CASE 2905, STYLE 22
TO92 (TO226AE)
1
2
3
3 DRAIN
1 SOURCE
2
GATE
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