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參數(shù)資料
| 型號： | MPF6661ZL1 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 封裝： | PLASTIC, TO-226AE, 3 PIN |
| 文件頁數(shù)： | 1/34頁 |
| 文件大?。?/td> | 319K |
| 代理商： | MPF6661ZL1 |
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4–93
Motorola Small–Signal Transistors, FETs and Diodes Device Data
TMOS FET Transistors
N–Channel — Enhancement
MAXIMUM RATINGS
Rating
Symbol
MPF6659
MPF6660
MPF6661
Unit
Drain – Source Voltage
VDS
35
60
90
Vdc
Drain – Gate Voltage
VDG
35
60
90
Vdc
Gate–Source Voltage
— Continuous
— Non–repetitive (tp ≤ 50 s)
VGS
VGSM
±20
±40
Vdc
Vpk
Drain Current
Continuous(1)
Pulsed(2)
ID
IDM
2.0
3.0
Adc
Total Device Dissipation
@ TC = 25°C
Derate above 25
°C
PD
2.5
20
Watts
mW/
°C
Total Device Dissipation
@ TA = 25°C
Derate above 25
°C
PD
1.0
8.0
Watts
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
– 55 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Zero–Gate–Voltage Drain Current
(VDS = Maximum Rating, VGS = 0)
IDSS
—
10
Adc
Gate–Body Leakage Current
(VGS = 15 Vdc, VDS = 0)
IGSS
—
100
nAdc
Drain–Source Breakdown Voltage
(VGS = 0, ID = 10 Adc)
MPF6659
MPF6660
MPF6661
V(BR)DSX
35
60
90
—
Vdc
ON CHARACTERISTICS(2)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(Th)
0.8
1.4
2.0
Vdc
Drain–Source On–Voltage
(VGS = 10 Vdc, ID = 1.0 Adc)
MPF6659
MPF6660
MPF6661
(VGS = 5.0 Vdc, ID = 0.3 Adc)
MPF6659
MPF6660
MPF6661
VDS(on)
—
0.8
0.9
1.8
3.0
4.0
1.5
1.6
Vdc
1. The Power Dissipation of the package may result in a lower continuous drain current.
2. Pulse Test: Pulse Width
v 300 s, Duty Cycle v 2.0%.
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
MPF6659
MPF6660
MPF6661
CASE 29–05, STYLE 22
TO–92 (TO–226AE)
1
2
3
3 DRAIN
1 SOURCE
2
GATE
REV 2
相關(guān)PDF資料 |
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| MPF6661RLRE | 2000 mA, 90 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
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| MPF6660 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF6660RLRA | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| MPF6660ZL1 | 2000 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
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