參數(shù)資料
型號(hào): MPF102RL
廠商: ON SEMICONDUCTOR
元件分類: 小信號(hào)晶體管
英文描述: VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92
封裝: CASE 29-11, TO-226AA, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大?。?/td> 251K
代理商: MPF102RL
JFET VHF Amplifier
N–Channel – Depletion
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Drain–Source Voltage
VDS
25
Vdc
Drain–Gate Voltage
VDG
25
Vdc
Gate–Source Voltage
VGS
–25
Vdc
Gate Current
IG
10
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
350
2.8
mW
mW/
°C
Junction Temperature Range
TJ
125
°C
Storage Temperature Range
Tstg
–65 to +150
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Gate–Source Breakdown Voltage
(IG = –10 Adc, VDS = 0)
V(BR)GSS
–25
Vdc
Gate Reverse Current
(VGS = –15 Vdc, VDS = 0)
(VGS = –15 Vdc, VDS = 0, TA = 100°C)
IGSS
–2.0
nAdc
Adc
Gate–Source Cutoff Voltage
(VDS = 15 Vdc, ID = 2.0 nAdc)
VGS(off)
–8.0
Vdc
Gate–Source Voltage
(VDS = 15 Vdc, ID = 0.2 mAdc)
VGS
–0.5
–7.5
Vdc
ON CHARACTERISTICS
Zero–Gate–Voltage Drain Current(1)
(VDS = 15 Vdc, VGS = 0 Vdc)
IDSS
2.0
20
mAdc
SMALL–SIGNAL CHARACTERISTICS
Forward Transfer Admittance(1)
(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
yfs
2000
1600
7500
mmhos
Input Admittance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yis)
800
mmhos
Output Conductance
(VDS = 15 Vdc, VGS = 0, f = 100 MHz)
Re(yos)
200
mmhos
Input Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Ciss
7.0
pF
Reverse Transfer Capacitance
(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)
Crss
3.0
pF
1. Pulse Test; Pulse Width
v 630 ms, Duty Cycle v 10%.
ON Semiconductort
Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 1
771
Publication Order Number:
MPF102/D
MPF102
CASE 29–11, STYLE 5
TO–92 (TO–226AA)
1
2
3
1 DRAIN
2 SOURCE
3
GATE
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