參數(shù)資料
型號(hào): MPC8358ECZQAGDGA
廠商: Freescale Semiconductor
文件頁數(shù): 13/95頁
文件大?。?/td> 0K
描述: MPU POWERQUICC II PRO 668-PBGA
標(biāo)準(zhǔn)包裝: 36
系列: MPC83xx
處理器類型: 32-位 MPC83xx PowerQUICC II Pro
速度: 400MHz
電壓: 1.2V
安裝類型: 表面貼裝
封裝/外殼: 668-BBGA 裸露焊盤
供應(yīng)商設(shè)備封裝: 668-PBGA-PGE(29x29)
包裝: 托盤
MPC8358E PowerQUICC II Pro Processor Revision 2.1 PBGA Silicon Hardware Specifications, Rev. 3
20
Freescale Semiconductor
DDR and DDR2 SDRAM
Table 16 provides the DDR capacitance when GVDD(typ) = 2.5 V.
6.2
DDR and DDR2 SDRAM AC Electrical Characteristics
This section provides the AC electrical characteristics for the DDR and DDR2 SDRAM interface.
6.2.1
DDR and DDR2 SDRAM Input AC Timing Specifications
Table 17 provides the input AC timing specifications for the DDR2 SDRAM interface when
GVDD(typ) = 1.8 V.
Table 18 provides the input AC timing specifications for the DDR SDRAM interface when
GVDD(typ) = 2.5 V.
Table 16. DDR SDRAM Capacitance for GVDD(typ) = 2.5 V
Parameter/Condition
Symbol
Min
Max
Unit
Notes
Input/output capacitance: DQ, DQS
CIO
68
pF
1
Delta input/output capacitance: DQ, DQS
CDIO
—0.5
pF
1
Note:
1. This parameter is sampled. GVDD = 2.5 V ± 0.125 V, f = 1 MHz, TA = 25°C, VOUT = GVDD/2, VOUT (peak-to-peak) = 0.2 V.
Table 17. DDR2 SDRAM Input AC Timing Specifications for GVDD(typ) = 1.8 V
At recommended operating conditions with GVDD of 1.8 V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—MVREF – 0.25
V
AC input high voltage
VIH
MVREF + 0.25
V
Table 18. DDR SDRAM Input AC Timing Specifications
At recommended operating conditions with GVDD of 2.5 V ± 5%.
Parameter
Symbol
Min
Max
Unit
Notes
AC input low voltage
VIL
—MVREF – 0.31
V
AC input high voltage
VIH
MVREF + 0.31
V
Note:
1. Maximum possible skew between a data strobe (MDQS[n]) and any corresponding bit of data (MDQ[8n + {0...7}] if 0
≤ n ≤ 7)
or ECC (MECC[{0...7}] if n = 8).
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