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    參數(shù)資料
    型號(hào): MPC8313ECVRAFFB
    廠商: Freescale Semiconductor
    文件頁(yè)數(shù): 11/99頁(yè)
    文件大?。?/td> 0K
    描述: IC MPU POWERQUICC II PRO 516PBGA
    標(biāo)準(zhǔn)包裝: 40
    系列: MPC83xx
    處理器類(lèi)型: 32-位 MPC83xx PowerQUICC II Pro
    速度: 333MHz
    電壓: 0.95 V ~ 1.05 V
    安裝類(lèi)型: 表面貼裝
    封裝/外殼: 516-BBGA 裸露焊盤(pán)
    供應(yīng)商設(shè)備封裝: 516-PBGAPGE(27x27)
    包裝: 托盤(pán)
    配用: MPC8313E-RDB-ND - BOARD PROCESSOR
    MPC8313E PowerQUICC II Pro Processor Hardware Specifications, Rev. 4
    Freescale Semiconductor
    19
    Table 21. DDR and DDR2 SDRAM Output AC Timing Specifications for Silicon Rev 2.x or Later
    Parameter
    Symbol1
    Min
    Max
    Unit
    Note
    MCK[n] cycle time, MCK[n]/MCK[n] crossing
    tMCK
    610
    ns
    2
    ADDR/CMD output setup with respect to MCK
    tDDKHAS
    ns
    3
    333 MHz
    2.1
    266 MHz
    2.5
    ADDR/CMD output hold with respect to MCK
    tDDKHAX
    ns
    3
    333 MHz
    2.0
    266 MHz
    2.7
    MCS[n] output setup with respect to MCK
    tDDKHCS
    ns
    3
    333 MHz
    2.1
    266 MHz
    3.15
    MCS[n] output hold with respect to MCK
    tDDKHCX
    ns
    3
    333 MHz
    2.0
    266 MHz
    2.7
    MCK to MDQS Skew
    tDDKHMH
    –0.6
    0.6
    ns
    4
    MDQ//MDM output setup with respect to
    MDQS
    tDDKHDS,
    tDDKLDS
    ps
    5
    333 MHz
    800
    266 MHz
    900
    MDQ//MDM output hold with respect to MDQS
    tDDKHDX,
    tDDKLDX
    ps
    5
    333 MHz
    750
    266 MHz
    1000
    MDQS preamble start
    tDDKHMP
    –0.5
    t
    MCK – 0.6
    –0.5
    t
    MCK + 0.6
    ns
    6
    MDQS epilogue end
    tDDKHME
    –0.6
    0.6
    ns
    6
    Notes:
    1. The symbols used for timing specifications follow the pattern of t(first two letters of functional block)(signal)(state)(reference)(state) for
    inputs and t(first two letters of functional block)(reference)(state)(signal)(state) for outputs. Output hold time can be read as DDR timing
    (DD) from the rising or falling edge of the reference clock (KH or KL) until the output went invalid (AX or DX). For example,
    tDDKHAS symbolizes DDR timing (DD) for the time tMCK memory clock reference (K) goes from the high (H) state until outputs
    (A) are setup (S) or output valid time. Also, tDDKLDX symbolizes DDR timing (DD) for the time tMCK memory clock reference
    (K) goes low (L) until data outputs (D) are invalid (X) or data output hold time.
    2. All MCK/MCK referenced measurements are made from the crossing of the two signals ±0.1 V.
    3. ADDR/CMD includes all DDR SDRAM output signals except MCK/MCK, MCS, and MDQ//MDM/MDQS.
    4. Note that tDDKHMH follows the symbol conventions described in note 1. For example, tDDKHMH describes the DDR timing
    (DD) from the rising edge of the MCK[n] clock (KH) until the MDQS signal is valid (MH). tDDKHMH can be modified through
    control of the DQSS override bits in the TIMING_CFG_2 register. This is typically set to the same delay as the clock adjust
    in the CLK_CNTL register. The timing parameters listed in the table assume that these 2 parameters have been set to the
    same adjustment value. See the MPC8313E PowerQUICC II Pro Integrated Processor Family Reference Manual, for a
    description and understanding of the timing modifications enabled by use of these bits.
    5. Determined by maximum possible skew between a data strobe (MDQS) and any corresponding bit of data (MDQ), ECC
    (MECC), or data mask (MDM). The data strobe should be centered inside of the data eye at the pins of the microprocessor.
    6. All outputs are referenced to the rising edge of MCK[n] at the pins of the microprocessor. Note that tDDKHMP follows the
    symbol conventions described in note 1.
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