參數(shù)資料
型號(hào): MPC5602DVLHR
廠商: FREESCALE SEMICONDUCTOR INC
元件分類: 微控制器/微處理器
英文描述: 32-BIT, FLASH, 48 MHz, MICROCONTROLLER, PQFP64
封裝: 10 X 10 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, ROHS COMPLIANT, MS-026BCD, LQFP-64
文件頁(yè)數(shù): 36/77頁(yè)
文件大小: 686K
代理商: MPC5602DVLHR
Electrical characteristics
MPC5602D Microcontroller Data Sheet, Rev. 3.1
Preliminary—Subject to Change Without Notice
Freescale Semiconductor
41
Table 23. Program and erase specifications (Code Flash)
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram
CC C Double word (64 bits) program time4
4 Actual hardware programming times. This does not include software overhead.
22
50
500
s
T16KpperaseC
16 KB block preprogram and erase time
300
500
5000
ms
T32KpperaseC
32 KB block preprogram and erase time
400
600
5000
ms
T128KpperaseC
128 KB block preprogram and erase time
800
1300
7500
ms
Tesus
Erase suspend latency
TBD
s
Table 24. Program and erase specifications (Data Flash)
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C. All times are subject to
change pending device characterization.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tswprogram CC C Single word (32 bits) program time
4
4 Actual hardware programming times. This does not include software overhead.
—30
70
300
s
T16Kpperase
16 KB block preprogram and erase time
700
800
1500
ms
TBank_D
64 KB block preprogram and erase time
1900
2300
4800
ms
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