參數(shù)資料
型號： MPC5602CF1CLL6R
廠商： FREESCALE SEMICONDUCTOR INC
元件分類： 微控制器/微處理器
英文描述： MICROCONTROLLER, PQFP100
封裝： 14 X 14 MM, 1.40 MM HEIGHT, 0.50 MM PITCH, LQFP-100
文件頁數(shù)： 61/106頁
文件大小： 1693K
代理商： MPC5602CF1CLL6R
MPC5604B/C Microcontroller Data Sheet, Rev. 8
Electrical characteristics
Freescale Semiconductor
58
4.11
Flash memory electrical characteristics
4.11.1
Program/Erase characteristics
Table 24 shows the program and erase characteristics.
Table 24. Program and erase specifications
Symbol
C
Parameter
Value
Unit
Min
Typ1
1 Typical program and erase times assume nominal supply values and operation at 25 °C.
Initial
max2
2 Initial factory condition: < 100 program/erase cycles, 25 °C, typical supply voltage.
Max3
3 The maximum program and erase times occur after the specified number of program/erase cycles. These maximum
values are characterized but not guaranteed.
Tdwprogram CC C Double word (64 bits) program time
4
4 Actual hardware programming times. This does not include software overhead.
—22
50
500
s
T16Kpperase
16 KB block pre-program and erase time
—
300
500
5000
ms
T32Kpperase
32 KB block pre-program and erase time
—
400
600
5000
ms
T128Kpperase
128 KB block pre-program and erase time
—
800
1300
7500
ms
Tesus
CC D Erase Suspend Latency
—
30
s
Table 25. Flash module life
Symbol
C
Parameter
Conditions
Value
Unit
Min
Typ
Max
P/E
CC C Number of program/erase cycles per
block for 16 KB blocks over the
operating temperature range (TJ)
—
100,000
—
cycles
P/E
CC C Number of program/erase cycles per
block for 32 KB blocks over the
operating temperature range (TJ)
—
10,000 100,000
—
cycles
P/E
CC C Number of program/erase cycles per
block for 128 KB blocks over the
operating temperature range (TJ)
—
1,000
100,000
—
cycles
Retention CC C Minimum data retention at 85 °C
average ambient temperature1
Blocks with 0–1,000 P/E
cycles
20
—
years
Blocks with
1,001–10,000 P/E
cycles
10
—
years
Blocks with
10,001–100,000 P/E
cycles
5—
—
years
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