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參數(shù)資料
| 型號： | MP6H1TR |
| 元件分類： | 功率晶體管 |
| 英文描述： | 1 A, 60 V, 2 CHANNEL, NPN, Si, POWER TRANSISTOR |
| 封裝： | MPT6, 6 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 130K |
| 代理商： | MP6H1TR |
MP6H1
Transistors
Rev.A
1/3
General purpose (Dual digital transistors)
MP6H1
Features
1) High hFE.
hFE=300(Min.)(VCE / IC=2V/500mA)
2) Low saturation voltage.
VCE(sat)=400mV(Max.) (IC/IB=500mA/5mA)
3) Built in Zener diode for protection against surges when
connected to inductive load.
Structure
NPN silicon epitaxial planar transistor
(Resistor built-in type)
Applications
Driver
Packaging specifications and hFE
Equivalent circuit
Type
MPT6
Taping
TR
1000
Package
Packaging style
Code
Basic ordering unit(pieces)
○
MP6H1
Absolute maximum ratings (Ta=25
°C)
《DTR1》 《DTR2》
Continuous
Pulsed
1 Pw=10ms, Single pulse
2 Each terminal mounted on a ceramic board
VCBO
VCEO
ICP 1
2
Power dissipation
Junction temperature
Storage temperature
Unit
V
A
Tstg
VEBO
Tｊ
A
W/TOTAL
W/ELEMENT
150
-55 to +150
2.0
Limits
PD *2
5
60±10
1.4
℃
Symbol
IC
1
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
60±10
Dimensions (Unit : mm)
MPT6
(6)
(5)
(4)
(1)
(2)
(3)
(1) : Emitter
(DTr1)
(2) : Base
(DTr1)
(3) : Collector (DTr2)
(4) : Emitter
(DTr2)
(5) : Base
(DTr2)
(6) : Collector (DTr1)
Di
DTr2
R=10k
DTr1
R
(6)
(5)
(4)
(1)
(2)
(3)
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