參數(shù)資料
型號： MP6404
元件分類： JFETs
英文描述： 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, 2-32C1K, FULL PACK, SIP-12
文件頁數(shù)： 2/11頁
文件大?。?/td> 276K
代理商： MP6404
MP6404
2004-07-01
10
Drain-source voltage VDS (V)
Safe Operating Area
(Applicable to Nch MOS FET)
Drain
c
u
rr
e
nt
I D
(A
)
Drain-source voltage VDS (V)
Safe Operating Area
(Applicable to Pch MOS FET)
Drain
c
u
rr
e
nt
I D
(A
)
Channel temperature Tch (°C)
EAS – Tch
(Applicable to Nch MOS FET)
A
val
anc
he
en
er
gy
E
AS
(
m
J)
Channel temperature Tch (°C)
EAS – Tch
(Applicable to Pch MOS FET)
A
val
anc
he
en
er
gy
E
AS
(
m
J)
)
0
25
100
200
300
400
500
50
75
100
125
150
0
25
40
80
120
160
200
50
75
100
125
150
0.1
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.3
1
3
10
30
3
10
30
100
ID max
1 ms*
100 s*
10 ms*
10 s*
100 ms*
0.1
1
*: Single nonrepetitive pulse
Tc = 25°C
Curves must be derated linearly with
increase in temperature.
0.3
1
3
10
30
3
10
30
100
ID max
1 ms*
100 s*
10 ms*
10 s*
100 ms*
Test Cirdcuit
Test Waveform
IAR
BVDSS
VDD
VDS
Peak IAR = 5 A, RG = 25
VDD = 25 V, L = 7 mH
15 V
=
DD
VDSS
2
AS
V
B
LI
2
1
Ε
Test Circuit
Test Waveform
IAR
BVDSS
VDD
VDS
Peak IAR = 5 A, RG = 25
VDD = 25 V, L = 14.84 mH
15 V
=
DD
VDSS
2
AS
V
B
LI
2
1
Ε
相關(guān)PDF資料
PDF描述
MP6404 5 A, 60 V, 0.32 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MP6M11 3.5 A, 30 V, 0.14 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
MPC5123YVY300B RISC PROCESSOR, PBGA516
MPC5123VY300BR RISC PROCESSOR, PBGA516
SPC5121YVY400BR RISC PROCESSOR, PBGA516
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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