參數(shù)資料
型號(hào)： MP4TD4135T
廠商： M-Pulse Microwave Inc.
英文描述： Silicon Bipolar MMIC Cascadable Amplifier
中文描述： 硅雙極單片級(jí)聯(lián)放大器
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 55K
代理商： MP4TD4135T
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD4135, MP4TD4136
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 1.0 GHz
15.0 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
3.3 Volt Operation
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD4135 and MP4TD4136 are high
performance silicon bipolar MMICs housed in a cost
effective ceramic microstrip packages. The MP4TD4135
and MP4TD4136 are designed for use where a general
purpose 50
Ω
gain block is required. Typical applications
include narrow and wide band IF and RF amplifiers in
industrial and military applications.
The MP4TD4135 and MP4TD4136 are fabricated using
a 10 GHz fT silicon bipolar technology that features gold
metalization
and
IC
passivation
performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
18
for
increased
4
6
8
10
12
14
16
0.1
1
10
FREQUENCY (GHz)
G
GAIN FLAT to DC
Id=35mA
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD4136.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
1,45
.083
2,11
.100
.085
2,16
.455 ±.030
11,54 ±0,76
±0.010
0.180
4,57
.006 ±.002
0,15 ±0,05
.022
0,56
.020
0,508
±0,25
MA4TD4136
MA4TD4135
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
°
C, Id = 35 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S21
2)
Δ
Gp
Gain Flatness
f
3 dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Absolute Maximum Ratings
1
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.9 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
15.5
-
-
-
-
-
-
-
-
2.8
-
Typ.
16.0
+ 1.0
1.2
1.5
1.5
8.5
4.2
19.0
200
3.3
-5.0
Max.
17.0
-
-
-
-
-
-
-
-
3.7
-
-
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
Parameter
Absolute Maximum
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