參數(shù)資料
型號(hào)： MP4TD1100
廠商： M-Pulse Microwave Inc.
英文描述： Silicon Bipolar MMIC Cascadable Amplifier
中文描述： 硅雙極單片級(jí)聯(lián)放大器
文件頁(yè)數(shù)： 1/3頁(yè)
文件大?。?/td> 148K
代理商： MP4TD1100
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD1100
Features
High Dynamic Range Cascadable
50
/75
Gain Block
3dB Bandwidth: 50 MHz to 1.0 GHz
17.5 dBm Typical P
1dB
@ 0.7 Ghz
11 dB Typical Gain @ 0.5 GHz
3.5 dB Typical Noise Figure @ 1.0 GHz
Description
M-Pulse's MP4TD1100 is a high performance silicon
bipolar MMIC chip. The MP4TD1100 is designed for
use in 50
or 75
systems where a high dynamic range
gain block is required. Typical applications include
narrow and wide band IF and RF amplifiers in industrial
and military applications.
The MP4TD1100 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
0
2
4
6
8
10
12
0.1
1
10
FREQUENCY (GHz)
G
Id=60mA
Electrical Specifications @ T
A
= +25
°
C, Id = 60 mA, Z0 = 50
Symbol
Parameters
Gp
Power Gain (
S21
2)
Gp
Gain Flatness
f
3dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1dB Gain Compression
NF
50
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Chip Outline Drawing1,2,3,4
RF Input
Feedback Capacitor
Ground
Optional RF Output & +5.5 Volts
375
(14.8 mil)
μ
375
(14.8 mil)
μ
Notes:
(unless otherwise specified)
1. Chip Thickness is 120
μ
m; 4.8 mils
2. Bond Pads are 40
μ
m; 1.6 mils typical in diameter
3. Output Contact & +DC Voltage Is Normally Made On
Backside Of Chip At Die Attach
4. Tolerance:
μ
m .xx =
±
.13; mil .x =
±
.5
Ordering Information
Model No.
MP4TD1100G
MP4TD1100W
Type of Carrier
GEL PACK
Waffle Pack
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.7 GHz
ref 50 MHz Gain
f = 0.1 to 2.0 GHz
f = 0.1 to 2.0 GHz
f = 0.7 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
-
-
-
-
-
-
-
-
-
4.5
-
Typ.
12.5
+ 1.2
1.0
1.9
1.9
17.5
4.5
30.0
160
5.5
-8.0
Max.
-
-
-
-
-
-
-
-
-
6.5
-
-
-
相關(guān)PDF資料
PDF描述
MP4TD1100G Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100W Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1110 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1135 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1135T Silicon Bipolar MMIC Cascadable Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MP4TD1100G 制造商:MPLUSE 制造商全稱(chēng):MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1100W 制造商:MPLUSE 制造商全稱(chēng):MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1110 制造商:MPLUSE 制造商全稱(chēng):MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1120 制造商:MPLUSE 制造商全稱(chēng):MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1135 制造商:MPLUSE 制造商全稱(chēng):MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
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