參數(shù)資料
型號: MP4TD0836
廠商: M-Pulse Microwave Inc.
英文描述: Silicon Bipolar MMIC Cascadable Amplifier
中文描述: 硅雙極單片級聯(lián)放大器
文件頁數(shù): 1/3頁
文件大?。?/td> 54K
代理商: MP4TD0836
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0835, MP4TD0836
Features
Cascadable 50
Ω
Gain Block
High Gain: 32.5 dB Typical Gain @ 0.1 GHz
18.5 dB Typical Gain @ 1.0 GHz
Low Noise Figure: 3.2 dB Typical @ 1.0 GHz
Cost Effective Ceramic Microstrip Package
Tape and Reel Packaging Available
Unconditionally Stable @ k>1
Description
M-Pulse's MP4TD0835 and MP4TD0836 are high
performance silicon bipolar MMIC housed in a cost
effective ceramic microstrip package. The MP4TD0835
and MP4TD0836 are designed for use where a low
noise (3.2 dB typical) general purpose 50
Ω
gain block is
required. Typical applications include narrow and wide
band IF and RF amplifiers in industrial and military
applications.
The MP4TD0835 and MP4TD0836 are fabricated using
a 10 GHz fT silicon bipolar technology that features gold
metalization
and
IC
passivation
performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
35
for
increased
0
5
10
15
20
25
30
0.1
1
10
FREQUENCY (GHz)
G
Id=36mA
Ceramic Microstrip Package Outline
1,2,3
Available in short lead version as MP4TD0836.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.085
2,16
.100
2,55
.020
0,51
.057
1,45
.083
2,11
.455±.030
1,56 ±0,76
0.018 ±0.010
4,57 ±0,25
.006
±.002
0,15±0,05
.022
0,56
MA4TD0835
MA4TD0836
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
3. See last page of data sheet for short lead Micro-X
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Electrical Specifications @ T
A
= +25
°
C, Id = 36 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S
21
2
)
SWR
in
Input SWR
SWR
out
Output SWR
P
1 dB
Output Power @ 1 dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 1.0 GHz
f = 4.0 GHz
f = 0.3 to 3.0 GHz
f = 0.4 to 3.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
Units
dB
dB
dB
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
-
17.5
-
-
-
-
-
-
-
7.0
-
Typ.
32.5
18.5
7.0
2.0
1.5
13.5
3.2
27.0
125
7.8
-17.0
Max.
-
19.0
-
-
-
-
-
-
-
8.4
-
-
-
相關(guān)PDF資料
PDF描述
MP4TD0836T Silicon Bipolar MMIC Cascadable Amplifier
MP4TD1120 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0870 Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0870T Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900 Silicon Bipolar MMIC Cascadable Amplifier
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
MP4TD0836T 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0870 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0870T 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier
MP4TD0900G 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier