參數(shù)資料
型號: MP4TD0770T
廠商: M-Pulse Microwave Inc.
英文描述: Silicon Bipolar MMIC Cascadable Amplifier
中文描述: 硅雙極單片級聯(lián)放大器
文件頁數(shù): 1/3頁
文件大?。?/td> 52K
代理商: MP4TD0770T
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0770
Features
Cascadable 50
Ω
Gain Block
Low Operating Voltage (4.0 V Typical Vd)
3dB Bandwidth: DC to 1.5 GHz
11.6 dB Typical Gain @ 1.0 GHz
Unconditionally Stable (k>1)
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0770 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
stripline package. The MP4TD0770 is useful where a
general purpose 50
Ω
gain block with good noise figure
is required. Typical applications include narrow and
wide band IF and RF amplifiers in industrial and military
applications.
The MP4TD0770 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
14
0
2
4
6
8
10
12
0.1
1
10
FREQUENCY (GHz)
G
Id = 22mA
Gain Flat to DC
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 ±.030
12,57±0,76
.004 ±.002
0,1 ±0,05
.035
0,89
.070
1,78
.020
0,51
1,02
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Ordering Information
Model No.
MP4TD0770
MP4TD0770T
Package
Hermetic Ceramic
Tape and Reel
Electrical Specifications @ T
A
= +25
°
C, Id = 22 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S
21
2
)
Δ
Gp
Gain Flatness
f
3 dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1dB
Output Power @ 1 dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 1.0 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
12.5
-
-
-
-
-
-
-
-
3.6
-
Typ.
13.5
±
1.0
1.5
1.5
1.3
6.0
4.5
19.0
140
4.0
-7.0
Max.
14.5
±
1.2
-
-
-
-
-
-
-
4.4
-
-
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
f = 1.0 GHz
-
-
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