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參數(shù)資料
| 型號： | MP4TD0670 |
| 廠商： | M-Pulse Microwave Inc. |
| 英文描述： | Silicon Bipolar MMIC Cascadable Amplifier |
| 中文描述： | 硅雙極單片級聯(lián)放大器 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大?。?/td> | 51K |
| 代理商： | MP4TD0670 |
Specification Subject to Change Without Notice
M-Pulse Microwave __________________________________________________________________________________ 1
PH (408) 432-1480 FX (408) 432-3440
M-Pulse Microwave
Silicon Bipolar MMIC
Cascadable Amplifier
MP4TD0670
V4.00
Features
Cascadable 50
Ω
Gain Block
3dB Bandwidth: DC to 0.8 GHz
18.5 dB Typical Gain @ 0.5 GHz
Unconditionally Stable (k>1)
Low Voltage Operation
Hermetic Gold-Ceramic Microstrip Package
Tape and Reel Packaging Available
Description
M-Pulse's MP4TD0670 is a high performance silicon
bipolar MMIC housed in a hermetic high reliability
package for surface mount usage. The MP4TD0670 is
useful where a general purpose 50
Ω
gain block with
lower (3.0 dB) noise figure is required. Typical
applications include narrow and wide band IF and RF
amplifiers in industrial and military applications.
The MP4TD0670 is fabricated using a 10 GHz fT silicon
bipolar technology that features gold metalization and IC
passivation for increased performance and reliability.
TYPICAL POWER GAIN vs FREQUENCY
22
0
2
4
6
8
10
12
14
16
18
20
0.1
1
10
FREQUENCY (GHz)
G
Id=16mA
Gold-Ceramic Microstrip Package Outline
1,2
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.495 ±.030
12,57±0,76
.004 ±.002
0,1±0,05
.035
0,89
.070
1,78
.020
0,51
.040
1,02
Notes:
(unless otherwise specified)
1. Dimensions are in / mm
2. Tolerance: in .xxx =
±
.005; mm .xx =
±
.13
Pin Configuration
Pin Number
1
2 & 4
3
Pin Description
RF Input
AC/DC Ground
RF Output and DC Bias
Ordering Information
Model No.
MP4TD0670
MP4TD0670T
Package
Ceramic
Tape and Reel
Electrical Specifications @ T
A
= +25
°
C, Id = 16 mA, Z0 = 50
Ω
Symbol
Parameters
Gp
Power Gain (
S
21
2
)
Δ
Gp
Gain Flatness
f
3 dB
3 dB Bandwidth
SWR
in
Input SWR
SWR
out
Output SWR
P
1 dB
Output Power @ 1 dB Gain Compression
NF
50
Ω
Noise Figure
IP
3
Third Order Intercept Point
t
D
Group Delay
V
d
Device Voltage
dV/dT
Device Voltage Temperature Coefficient
Test Conditions
f = 0.1 GHz
f = 0.1 to 0.6 GHz
Units
dB
dB
GHz
-
-
dBm
dB
dBm
ps
V
mV/
°
C
Min.
18.5
-
-
-
-
-
-
-
-
3.1
-
Typ.
19.5
±
0.7
0.8
1.8
1.8
4.5
3.0
14.5
200
3.5
-8.0
Max.
22
±
1.0
-
-
-
-
3.5
-
-
3.9
-
-
f = 0.1 to 1.5 GHz
f = 0.1 to 1.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
f = 0.5 GHz
-
-
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| MP4TD0670T | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0700 | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0700G | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0700W | Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0770 | Silicon Bipolar MMIC Cascadable Amplifier |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| MP4TD0670T | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0700 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0700G | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0700W | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
| MP4TD0770 | 制造商:MPLUSE 制造商全稱:MPLUSE 功能描述:Silicon Bipolar MMIC Cascadable Amplifier |
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