
Specification Subject to Change Without Notice 
M-Pulse Microwave                        __________________________________________________________________________       1
Tel.  (408) 432-1480 
FX.  (408) 432-3440 
M-Pulse Microwave 
Silicon Bipolar MMIC 
Cascadable Amplifier 
MP4TD0335, MP4TD0336
Features 
 Cascadable 50
Ω
 Gain Block 
 3dB Bandwidth: DC to 2.0 GHz 
 12.1 dB Typical Gain @ 1.0 GHz 
 Unconditionally Stable (k>1) 
 Cost Effective Ceramic Microstrip Package 
 Tape and Reel Packaging Available 
Description 
M-Pulses’s MP4TD0335 and MP4TD0336 are high 
performance silicon bipolar MMICs housed in a cost 
effective ceramic microstrip packages.  The MP4TD0335 
and MP4TD0336 are designed for use where a general 
purpose 50
Ω
 gain block is required.  Typical applications 
include narrow and wide band IF and RF amplifiers in 
industrial and military applications. 
The MP4TD0335 and MP4TD0336 are fabricated using 
a 10 GHz fT silicon bipolar technology that features gold 
metalization 
and 
IC 
passivation 
performance and reliability. 
TYPICAL POWER GAIN vs FREQUENCY 
14
for 
increased 
0
2
4
6
8
10
12
0.01
0.1
1
10
FREQUENCY (GHz)
G
Id=35mA
GAIN FLAT to DC
Ceramic Microstrip Case Style Outlines
1,2,3
Available in short lead version as MP4TD0336.
RF OUT
AND BIAS
RF INPUT
GND
GND
2
3
1
4
.057
.083
2,11
.100
2,54
.085
2,15
.455 ±.030
11,54±0,76
.006 ±.002
.022
0,56
.020
0,508
±0.010
0.180
4.57 ±0,25
MA4TD0336
MA4TD0335
Notes:
 (unless otherwise specified) 
1. Dimensions are in / mm 
2. Tolerance: 
in .xxx = 
±
.005;  mm .xx = 
±
.13 
3. See last page of data sheet for short lead Micro-X 
Pin Configuration 
Pin Number
1 
2 & 4 
3 
Pin Description 
RF Input 
AC/DC Ground 
RF Output and DC Bias 
Electrical Specifications @ T
A
 = +25
°
C, Id = 35 mA,  Z0 = 50
Ω
Symbol 
Parameters 
Gp 
Power Gain (
S21
2) 
Δ
Gp 
Gain Flatness 
f
3dB
3 dB Bandwidth 
SWR
in
Input SWR 
SWR
out
Output SWR 
P
1dB
Output Power @ 1dB Gain Compression 
NF 
50 
Ω
 Noise Figure 
IP
3
Third Order Intercept Point 
t
D
Group Delay 
V
d
Device Voltage 
dV/dT 
Device Voltage Temperature Coefficient 
Test Conditions 
f = 0.1 GHz 
f = 0.1 to 1.6 GHz 
Units  
dB 
dB 
GHz 
- 
- 
dBm 
dB 
dBm 
ps 
V 
mV/
°
C 
Min. 
12.0 
- 
- 
- 
- 
- 
- 
- 
- 
4.5 
- 
Typ. 
13.0 
+ 0.8 
2.0 
1.6 
1.5 
10.0 
5.5 
23.0 
125 
5.0 
-8.0 
Max. 
14.0 
+ 1.1 
- 
- 
- 
- 
- 
- 
- 
5.5 
- 
- 
f = 0.1 to 3.0 GHz 
f = 0.1 to 3.0 GHz 
f = 1.0 GHz 
f = 1.0 GHz 
f = 1.0 GHz 
f = 1.0 GHz 
- 
-